| 两种增强可靠性的电荷泵新结构 |
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| 引用本文： | 金荣华,刘志,江舟,曾晓洋.两种增强可靠性的电荷泵新结构[J].复旦学报(自然科学版),2008,47(1):14-20. |
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| 作者姓名： | 金荣华 刘志 江舟 曾晓洋 |
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| 作者单位： | 复旦大学,专用集成电路和系统国家重点实验室,上海,201203 |
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| 摘 要： | 从器件可靠性角度出发提出两种升压电荷泵新结构.一种不需用高压工艺但是需要三阱工艺,一种既不需高压工艺也不需三阱工艺,可以用普通工艺实现.仿真结果表明电路性能符合理论分析.
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| 关 键 词： | 集成电路 模拟集成电路 电荷泵 可靠性 三阱工艺 高压工艺 |
| 文章编号： | 0427-7104（2008）01-0014-07 |
| 收稿时间： | 2006-10-19 |
| 修稿时间： | 2006年10月19 |
Two New Charge Pumps with Improved Reliablity |
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| JIN Rong-hua,LIU Zhi,JIANG Zhou,ZENG Xiao-yang.Two New Charge Pumps with Improved Reliablity[J].Journal of Fudan University(Natural Science),2008,47(1):14-20. |
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| Authors: | JIN Rong-hua LIU Zhi JIANG Zhou ZENG Xiao-yang |
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| Abstract: | The reliability of the voltage-multiplication charge pump circuit is analyzed.Two new structures of the charge pump are proposed.The first one eliminates thenecessity for a high-voltage process but needs using a triple-well process;the second one can be implemented in a standard process.Simulation showed that the circuit performance is in agreement with the theoretical analysis. |
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| Keywords: | integrated circuits analog integrated circuits charge pump reliability the triple well process the high-voltage process |
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