熔凝玻璃钝化的研究和应用

本文介绍了以电泳涂敷法制成的较薄玻璃膜为介质膜的金属—玻璃—半导体(MGs)结构的C—V特性测量,介绍了离子探针(IMA)测量玻璃膜的性质以及运用计算机进行曲线拟合。结果表明,Zn系玻璃膜的负电荷密度和其热成型过程的气氛和温度处理有关。Na~+离子主要聚集在玻璃膜内靠表面一侧,其随深度分布趋势接近指数函数。作者研制了内层玻璃钝化高压PN结器件,测量得到了良好的电特性。

Researches and Application of Fused Glass Passivation

Measurement of Metal-Glass-Semiconductor (MGS) capacitances as a function of bias voltage is developed. Thinner glass film is manufactured by elec trophoretic method. The film properties are investigated by IMA (ion microprobe analyzer) and the curve-fitted resultz are given by computer. The result shows that the density of negative charge in ZnO glass film is dependent on the fused conditions of atmosphere and temperature treatment. Na~+ mobile cations are piled up near surface with the quantity lowered in a minus exponential function of depth in the film. A fused glass passivated planar type PN junction device with a simple etched contour was manufactured and tested resulting in high avalanche breakdown voltage.