| 基于蒙特卡洛法的硅纳米线热导率研究 |
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| 引用本文： | 王赞,陈云飞,贺贇晖,陈敏华.基于蒙特卡洛法的硅纳米线热导率研究[J].东南大学学报(自然科学版),2009,39(2). |
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| 作者姓名： | 王赞 陈云飞 贺贇晖 陈敏华 |
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| 作者单位： | 1. 东南大学机械工程学院,南京,211198
2. 东南大学机械工程学院,南京,211198;东南大学MEMS教育部重点实验室,南京,211198 |
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| 摘 要： | 声子在纳米尺度下的输运需要考虑量子效应与边界效应,通过解析方法获得其传输特性比较困难,采用蒙特卡洛方法(Monte Carlo,MC)构建了声子在体态硅与硅纳米线结构中的输运模型,简化了边界散射的选择机制与处理方法.在15～1 000 K的温度范围内,对体态硅的热导率进行了模拟,验证了MC模型对本征散射处理方法的正确性,进而模拟了等效直径为22,37与56 nm的硅纳米线在15～315 K温度范围内的热导率,37和56 nm硅纳米线热导率与实验值符合较好,22 nm硅纳米线热导率比实验值偏大.分析认为随着等效半径的减小,声子色散曲线发生改变,迟豫时间减小,声子发生边界散射的频率增加,导致热阻增大.基于以上分析,通过对边界散射迟豫时间的修正,获得了与实验值较为一致的模拟结果.
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| 关 键 词： | 蒙特卡洛 声子 热导率 纳米线 |
Study on thermal conductivity of Si nanowire based on Monte Carlo model |
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| Wang Zan,Chen Yunfei,He Yunhui,Chen Minhua.Study on thermal conductivity of Si nanowire based on Monte Carlo model[J].Journal of Southeast University(Natural Science Edition),2009,39(2). |
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| Authors: | Wang Zan Chen Yunfei He Yunhui Chen Minhua |
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| Institution: | 1School of Mechanical Engineering;Southeast University;Nanjing 211198;China;2Key Laboratory of MEMS of Ministry of Education;China |
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| Abstract: | Due to the quantum and boundary effects,it is hard to obtain the properties of phonon transport in a low dimensional structure by means of analytical solutions.A dedicated Monte Carlo model was built by simplifying the phonon scattering processes to study the thermal properties for bulk silicon and silicon nanowire.Phonon transport in bulk silicon was simulated at temperature ranging from 15 to 1000K,which proves the correctness of the MC model. Furthermore,the silicon nanowires with equivalent diameter of ... |
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| Keywords: | Monte Carlo phonon thermal conductivity nanowire |
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