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电子激发态CCl2自由基被H2O猝灭的研究
引用本文:高义德,刘云珍,陈晻,陈从香.电子激发态CCl2自由基被H2O猝灭的研究[J].安徽师范大学学报(自然科学版),2001,24(2):103-109.
作者姓名:高义德  刘云珍  陈晻  陈从香
作者单位:中国科学院选键化学开放实验室中国科学技术大学化学物理系
基金项目:国家自然科学基金;10032050;
摘    要:对CCl4/Ar混合气体直流脉冲放电产生CCl2自由基,再用541.52nm激光将电子基态CCl2激励到激发态A1B21(0,4,0)振动态的K=0能级上,通过检测激发态CCl2时间分辨荧光信号,测得室温下CCl2(A1B1和a^3B1)被H2O分子猝灭的实验结果,用三能级模型分析处理实验数据,获得态分辨速率常数KA和Ka值,利用UMP2(Full)/6-31G(d,p)方法计算了该反应的势能面,揭示了反应的插入和加成-消除机理。

关 键 词:势能面  猝灭速率常数  H2O  三能级模型  反应机理  CCl2自由基
文章编号:1001-2443(2001)02-0103-07
修稿时间:2001年3月20日

Ab INITIO CALCULATIONS ON THE REACTION MECHANISM FOR THE CCl2 WITH H2O AND QUENCHING OF CCl2(A1B1 AND a3B1) BY H2O
GAO Yi de,LIU Yun zhen,CHEN Yang,CHEN Cong xiang.Ab INITIO CALCULATIONS ON THE REACTION MECHANISM FOR THE CCl2 WITH H2O AND QUENCHING OF CCl2(A1B1 AND a3B1) BY H2O[J].Journal of Anhui Normal University(Natural Science Edition),2001,24(2):103-109.
Authors:GAO Yi de  LIU Yun zhen  CHEN Yang  CHEN Cong xiang
Abstract:CCl 2 free radicals were produced by dc discharge of CCl 4(in Ar). Ground electronic state CCl 2 radical was electronically excited to A 1B 1 (0,4,0) state K=0 level with Nd:YAG laser pumped dye laser at 541.52 nm. Experimental quenching data of CCl 2 (A 1B 1 and a 3B 1) by H 2O were obtained by observing time resolved fluorescence from the excited CCl 2 radicals transition, which showed a superposition of two exponential decay components. The state-resolved rate constants K A and Ka were acquired by analyzing and dealing with these data by using three-level-model, which was put forward by us. The extensive potential energy surface (PES) for CCl 2 with H 2O has been studied using the UMP 2(full)/6-31G(d, P). The addition-elimination reaction mechanism is revealed.
Keywords:CCl 2(A  1B  1  a  3B  1)  potential energy surface  Quenching rate constant  H  2O  Three  level model  Reaction mechanism
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