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| 铒离子注入氮化镓的光学活性与缺陷掺杂变化 | |
| 引用本文： | 迟林翔,陈田祥,孙煜东,李琳,成枫锋.铒离子注入氮化镓的光学活性与缺陷掺杂变化[J].北京师范大学学报(自然科学版),2017,53(5):528-531. |
| 作者姓名： | 迟林翔 陈田祥 孙煜东 李琳 成枫锋 |
| 作者单位： | 北京师范大学射线束与材料改性教育部重点实验室,北京师范大学核科学与技术学院,100875,北京;北京市辐射中心,100875,北京;中国科学院高能物理研究所,100049,北京;华北电力大学(北京),102206,北京;北京化工大学,100029,北京 |
| 基金项目： | 北京师范大学科研基金，中央高校基本科研业务费专项基金资助项目 |
| 摘 要： | 对100keV、1×1015cm-2的Er离子注入的GaN 退火样品的各项性质进行研究,采取光致发光(室温)、拉曼光谱和卢瑟福背散射对不同的退火样品的微观结构和光学性质进行研究.在退火样品中,均观测到了在1539nm 附近的PL峰.随着退火温度的升高,PL峰强在900℃时达到最大值.RBS结果显示随着温度的升高,Er离子不断扩散,且有部分在表面析出,导致在光学活性位置上的Er离子减少,使PL强度在更高温度下减弱. |
| 关 键 词： | 材料改性 氮化镓 离子注入 拉曼光谱 RBS |
Optical activity and defect/dopant evolution in Er-implanted GaN |
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| Institution: | 1)Key Laboratory of Beam Technology and Material Modification of Ministry of Education,College of Nuclear Science and Technology,Beijing Normal University,100875,Beijing,China; 2)Beijing Radiation Center,100875,Beijing,China; 3)Institute of High Energy Physics,Chinese Academy of Sciences,100049,Beijing,China; 4)North China Electric Power University (Beijing),102206,Beijing,China; 5)Beijing University of Chemical Technology,100029,Beijing,China |
| Abstract: | The annealing behavior of 100 keV Er-implanted GaN at a fluence of 1015cm-2 is reported in the present work.The microstructural and optical properties of samples with different thermal treatments were studied by room temperature photoluminescence (PL),Raman spectra,and Rutherford backscattering.A possible correlation between microstructural and optical properties was established.A PL peak at about 1 540 nm was observed for all as-implanted and post-annealed samples.The PL peak intensity reached a maximum at an annealing temperature of 900 ℃.The decrease in PL intensity at higher annealing temperature (1 050 ℃) could be attributed to a reduction of optically active Er sites due to diffusion-out of Er with increasing annealing temperatures as shown by Rutherford backscattering spectrometry. |
| Keywords: | material modification GaN ion implantation Raman spectrum RBS |
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