W离子注入VO2薄膜结构及红外发射性能研究

探讨了低剂量离子注入技术对VO₂薄膜的结构和红外发射性能的影响，发现1×1015 cm?2注量的W离子注入掺杂时，会对VO₂薄膜的晶体结构产生一定的损伤；经400 ℃退火处理后部分恢复了薄膜的单斜相晶体结构，且退火处理后，在掺杂W离子、结构缺陷和氧空位的共同作用下，掺杂量0.12%即可使VO₂薄膜的相变温度降低8.9 ℃；掺杂原子数量每增加1%，其相变温度相应变化74.2 ℃；W离子注入并经退火处理后，VO₂薄膜的红外发射率为0.35～0.46，其在低温区间的红外发射率相比未注入薄膜降低了0.14，这大幅度提高了VO₂薄膜在低温区的红外隐身性能． 

Structural and infrared-emission properties of W ion-implanted VO2 films

Vanadium dioxide (VO₂), a typical metal insulator transition material, potentially has wide applications in functional materials due to a change in property before and after phase transition．But such applications are limited by the phase transition temperature of 68.0 ℃．In this work, monoclinic VO₂ prepared on SiO₂/Si substrate was doped with low doses of W ions after ion implantation, before the films were annealed．Crystal structure of VO₂ films was damaged by W ion implantation at 1×1015 ions/cm2．After annealing at 400 ℃, monoclinic crystal structure of the film was partially recovered．After annealing, phase transition temperature of VO₂ thin films decreased by 8.9 ℃ with doping of 0.12%, the change rate being 74.2 ℃．Infrared emissivity was reduced to 0.46-0.35．Infrared emissivity in low temperature region was 0.14 lower than the original VO₂ film．These changes greatly improved infrared stealth performance of the film in low temperature region．