| 磁控反应溅射直接生长绒面H化Ga掺杂ZnO-TCO薄膜及其特性研究 |
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| 引用本文： | 王斐,陈新亮,耿新华,黄茜,张德坤,孙建,魏长春,张晓丹,赵颖.磁控反应溅射直接生长绒面H化Ga掺杂ZnO-TCO薄膜及其特性研究[J].科技创新导报,2012(4):724-729. |
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| 作者姓名： | 王斐 陈新亮 耿新华 黄茜 张德坤 孙建 魏长春 张晓丹 赵颖 |
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| 作者单位： | 南开大学光电子薄膜器件与技术研究所光电子薄膜器件与技术天津市重点实验室光电信息技术科学教育部重点实验室,南开大学光电子薄膜器件与技术研究所光电子薄膜器件与技术天津市重点实验室光电信息技术科学教育部重点实验室,南开大学光电子薄膜器件与技术研究所光电子薄膜器件与技术天津市重点实验室光电信息技术科学教育部重点实验室,南开大学光电子薄膜器件与技术研究所光电子薄膜器件与技术天津市重点实验室光电信息技术科学教育部重点实验室,南开大学光电子薄膜器件与技术研究所光电子薄膜器件与技术天津市重点实验室光电信息技术科学教育部重点实验室,南开大学光电子薄膜器件与技术研究所光电子薄膜器件与技术天津市重点实验室光电信息技术科学教育部重点实验室,南开大学光电子薄膜器件与技术研究所光电子薄膜器件与技术天津市重点实验室光电信息技术科学教育部重点实验室,南开大学光电子薄膜器件与技术研究所光电子薄膜器件与技术天津市重点实验室光电信息技术科学教育部重点实验室,南开大学光电子薄膜器件与技术研究所光电子薄膜器件与技术天津市重点实验室光电信息技术科学教育部重点实验室 |
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| 基金项目： | 国家“973”重点基础研究(2011CBA00705,2011CBA00706,2011CBA00707);国家高技术研究发展计划(2009AA050602);科技部国际合作(2009DFA62580);天津市应用基础及前沿技术研究计划(09JCYBJC06900);中央高校基本科研业务费专项资金(65010341)资助项目 |
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| 摘 要： | 采用直流磁控溅射技术,在玻璃衬底上直接生长出了具有绒面结构的H化Ga掺杂ZnO(HGZO)薄膜。研究了H2流量对薄膜结构、表面形貌及光电特性的影响。实验表明,在溅射过程中引入H2明显改善HGZO薄膜电学性能,并且能够直接获得具有绒面结构的薄膜。在H2流量为2.0sccm时,所制备的HGZO薄膜具有特征尺寸约200nm的类金字塔状表面形貌,同时薄膜方阻为4.8Ω,电阻率达到8.77×10-4Ω.cm。H2的引入可以明显改善薄膜短波区域的光学透过,生长获得的HGZO薄膜可见光区域平均透过率优于85%,近红外区域波长到1 100nm时仍可达80%。为了进一步提高薄膜光散射能力和光学透过率,根据不同H2流量下HGZO薄膜性能的优点,提出了梯度H2技术生长HGZO薄膜;采用梯度H2工艺生长获得的HGZO薄膜长波区域透过率有了一定的提高,薄膜具有弹坑状表面形貌,并且其光散射能力有了明显提高。
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| 关 键 词： | H化Ga掺杂ZnO(HGZO)薄膜 磁控溅射 绒面结构 梯度H2技术 薄膜太阳能电池 |
Development of natively textured hydrogenated Ga-doped ZnO-TCO thin films for solar cells via magnetron reactive sputtering |
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| WANG Fei,CHEN Xin-liang,GENG Xin-hu,HUANG Qian,ZHANG De-kun,SUN Jian,WEI Chang-chun,ZHANG Xiao-dan and ZHAO Ying.Development of natively textured hydrogenated Ga-doped ZnO-TCO thin films for solar cells via magnetron reactive sputtering[J].Science and Technology Consulting Herald,2012(4):724-729. |
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| Authors: | WANG Fei CHEN Xin-liang GENG Xin-hu HUANG Qian ZHANG De-kun SUN Jian WEI Chang-chun ZHANG Xiao-dan and ZHAO Ying |
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| Institution: | Key Laboratory on Photoelectronic Thin Film Devices and Technology of the City of Tianjin,Key Laboratory of Optoelectronic Information Science and Technology of Ministry of Education,Institute of Photoelectronic Thin Film Devices and Technology,Nankai University,Tianjin 300071,China,Key Laboratory on Photoelectronic Thin Film Devices and Technology of the City of Tianjin,Key Laboratory of Optoelectronic Information Science and Technology of Ministry of Education,Institute of Photoelectronic Thin Film Devices and Technology,Nankai University,Tianjin 300071,China,Key Laboratory on Photoelectronic Thin Film Devices and Technology of the City of Tianjin,Key Laboratory of Optoelectronic Information Science and Technology of Ministry of Education,Institute of Photoelectronic Thin Film Devices and Technology,Nankai University,Tianjin 300071,China,Key Laboratory on Photoelectronic Thin Film Devices and Technology of the City of Tianjin,Key Laboratory of Optoelectronic Information Science and Technology of Ministry of Education,Institute of Photoelectronic Thin Film Devices and Technology,Nankai University,Tianjin 300071,China,Key Laboratory on Photoelectronic Thin Film Devices and Technology of the City of Tianjin,Key Laboratory of Optoelectronic Information Science and Technology of Ministry of Education,Institute of Photoelectronic Thin Film Devices and Technology,Nankai University,Tianjin 300071,China,Key Laboratory on Photoelectronic Thin Film Devices and Technology of the City of Tianjin,Key Laboratory of Optoelectronic Information Science and Technology of Ministry of Education,Institute of Photoelectronic Thin Film Devices and Technology,Nankai University,Tianjin 300071,China,Key Laboratory on Photoelectronic Thin Film Devices and Technology of the City of Tianjin,Key Laboratory of Optoelectronic Information Science and Technology of Ministry of Education,Institute of Photoelectronic Thin Film Devices and Technology,Nankai University,Tianjin 300071,China,Key Laboratory on Photoelectronic Thin Film Devices and Technology of the City of Tianjin,Key Laboratory of Optoelectronic Information Science and Technology of Ministry of Education,Institute of Photoelectronic Thin Film Devices and Technology,Nankai University,Tianjin 300071,China and Key Laboratory on Photoelectronic Thin Film Devices and Technology of the City of Tianjin,Key Laboratory of Optoelectronic Information Science and Technology of Ministry of Education,Institute of Photoelectronic Thin Film Devices and Technology,Nankai University,Tianjin 300071,China |
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| Abstract: | |
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| Keywords: | hydrogenated Ga-doped ZnO(HGZO) thin films magnetron sputtering textured surface gradient H2 growth thin film solar cells |
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