| 氧化纳晶硅的光致荧光 |
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| 引用本文： | 张荣涛,侯丽梅,王晓允,于示强.氧化纳晶硅的光致荧光[J].贵州大学学报(自然科学版),2009,26(1):27-30. |
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| 作者姓名： | 张荣涛 侯丽梅 王晓允 于示强 |
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| 作者单位： | 1. 贵州大学,贵州省光电子技术与应用重点实验室,贵州,贵阳,550025
2. 山东省菜芜市第17中学,山东,莱芜,271100 |
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| 摘 要： | 观测到纳晶硅表面上氧化结构在692nm和694nm处的尖锐受激发光。这种辐射是514nm激光泵浦发生的。受激发光峰的半高宽为0．5nm（洛伦兹形分布）。这种特殊的纳晶硅氧化结构是通过激光辐照和退火处理后形成的，只有控制好退火的时间，才能出现强烈的受激发光。解释这种受激辐射的模型已提出，其中多孔纳晶硅与氧化硅界面的陷阱态起着重要的作用。
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| 关 键 词： | 界面态 受激辐射 纳晶硅氧化结构 |
Photoluminescence on Nanocluster of Silicon Oxidized |
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| ZHANG Rong-tao,HOU Li-mei,WANG Xiao-yun,YU Shi-giang.Photoluminescence on Nanocluster of Silicon Oxidized[J].Journal of Guizhou University(Natural Science),2009,26(1):27-30. |
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| Authors: | ZHANG Rong-tao HOU Li-mei WANG Xiao-yun YU Shi-giang |
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| Institution: | 1.Key Laboratory of Photoelectron Technology and Application;Guizhou University;Guiyang 550025;China;2.Lai Wu No.17 Middle School;Laiwu 271100;China |
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| Abstract: | timulated photolum inescence is observed at 694nm and at 692nm on nanocluster of silicon oxidized.The emission is pumped with 514nm continuous wave and has a threshold at 1.2mW pump power.The emission pulse has a Lorentzian shape with a full width at half maximum (FWHM) of0.5-0.6nm.The stimulated emission is from some oxide nanostructure fabricated by laser irradiation and annealing treatment on silicon.And controlling the time of annealing can produce a good coherent emission on silicon.Amodel is proposed ... |
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| Keywords: | interface states stimulated emission oxide structure of silicon |
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