| 硅基上低维结构的受激发光 |
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| 引用本文： | 张荣涛,王海旭,秦朝建,刘世荣.硅基上低维结构的受激发光[J].贵州大学学报(自然科学版),2008,25(5). |
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| 作者姓名： | 张荣涛 王海旭 秦朝建 刘世荣 |
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| 作者单位： | 1. 贵州省光电子技术与应用重点实验室,贵州,贵阳,550025
2. 中国科学研究院地化所,贵州,贵阳,550003 |
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| 基金项目： | 国家自然科学基金，贵州省研究生创新基金 |
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| 摘 要： | 用514nm 激光抽运纳晶硅样品时,我们观测到表面上氧化结构在692nm 和 694nm处的尖锐受激发光,其明显的阈值行为证明了它的受激辐射特性.纳晶硅氧化结构通过激光辐照和退火处理来形成.解释这种受激辐射的模型已提出,其中纳晶硅与氧化硅之间的陷阱态起着重要的作用.
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| 关 键 词： | 受激辐射 纳晶硅氧化结构 陷阱态 |
Stimulated Emission from Low-dimensional on Silicon |
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| ZHANG Rong-tao,WANG Hai-xu,QIN Chao-jian,LIU Shi-rong.Stimulated Emission from Low-dimensional on Silicon[J].Journal of Guizhou University(Natural Science),2008,25(5). |
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| Authors: | ZHANG Rong-tao WANG Hai-xu QIN Chao-jian LIU Shi-rong |
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| Institution: | ZHANG Rong-tao1,WANG Hai-xu1,QIN Chao-jian2,LIU Shi-rong2(1.Key Laboratory of Photoelectron Technology , Application,Guizhou University,Guiyang 550025,China,2.Institute of Geochemistry,Chinese Academy of Sciences,Guiyang 550003,China) |
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| Abstract: | Stimulated emission has been observed from oxide structure on Si nanocrystal when optically excited by 514nm laser.The twin peaks at 694nm and 692nm are dominated by stimulated emission which can be demonstrated by its threshold behavior and transition from sub-threshold to linear evolution.The oxide structure was fabricated by laser irradiation and annealing treatment on Si nanocrystal.A model for explaining the stimulated emission has been proposed in which the trap states of the interface between oxide o... |
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| Keywords: | Stimulated emission Oxide structure of silicon Trap States |
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