| 应用于无线通信基站的Doherty功率放大器 |
| |
| 引用本文： | 张鑫,王斌,熊梓丞,滕江.应用于无线通信基站的Doherty功率放大器[J].重庆邮电大学学报(自然科学版),2018,30(6):783-788. |
| |
| 作者姓名： | 张鑫 王斌 熊梓丞 滕江 |
| |
| 作者单位： | 重庆邮电大学 光电工程学院,重庆 400065,重庆邮电大学 光电工程学院,重庆 400065,重庆邮电大学 光电工程学院,重庆 400065,重庆邮电大学 光电工程学院,重庆 400065 |
| |
| 基金项目： | 国家自然科学基金(61102026);重庆邮电大学自然科学基金(A2015-47) |
| |
| 摘 要： | 采用Doherty技术设计并实现了一款应用于无线通信基站的S波段高效率功率放大器，通过非对称功率输入的方式使得整个功放在更宽的功率范围内获得高效率。设计中采用了安捷伦公司的先进设计系统软件(advanced design system，ADS)，选取恩智浦公司型号为MRF7S21080H与MRF8S21100H的横向扩散金属氧化物半导体(laterally diffused metal oxide semiconductor，LDMOS)功放晶体管，两款晶体管的工作频率均为2.14~2.17 GHz。经过电路仿真与实物调试，最终设计并实现了功率回退达到7 dB的功率放大器，其增益为13.5 dB，并且在7 dB功率回退点上效率达到35%，峰值功率效率达到42%。相比其他功率放大器，该放大器具有较大的功率回退范围与更高的效率。结果证明，通过不对称输入方式所设计的Doherty功率放大器可以获得更宽的功率回退范围。
|
| 关 键 词： | 功率放大器 Doherty 功率回退 高效率 功率附加效率 |
| 收稿时间： | 2017/10/16 0:00:00 |
| 修稿时间： | 2018/7/20 0:00:00 |
Doherty power amplifier for wireless communication base station |
| |
| ZHANG Xin,WANG Bin,XIONG Zicheng and TENG Jiang.Doherty power amplifier for wireless communication base station[J].Journal of Chongqing University of Posts and Telecommunications,2018,30(6):783-788. |
| |
| Authors: | ZHANG Xin WANG Bin XIONG Zicheng and TENG Jiang |
| |
| Institution: | College of Optical and Electronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, P. R. China,College of Optical and Electronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, P. R. China,College of Optical and Electronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, P. R. China and College of Optical and Electronic Engineering, Chongqing University of Posts and Telecommunications, Chongqing 400065, P. R. China |
| |
| Abstract: | This paper designed an S-band high efficiency power amplifier with Doherty technology for base station. The design obtains high efficiency and wide power back-up area by asymmetrical power input. During the design, the advanced design system (ADS) of Agilent company is applied, and the laterally diffused metal oxide semiconductor field effect transistor (LDMOS FET) MRF7S21080H and MRF8S21100H from NXP is adopted. The operating frequency is between 2.14 GHz and 2.17 GHz. After the simulation and the test, the power amplifier reaches 7 dB power back-up area, gets 13.5 dB gain, the power-added efficiency over 35% at the power back off area and over 42% at maximum output power. Compared with other power amplifiers, the power amplifier has wider power back off area and higher efficiency. Results show that the Doherty power amplifier using asymmetrical power input can acquire wider power back-up area. |
| |
| Keywords: | power amplifier Doherty power back-up high efficiency power-added efficiency |
|
| 点击此处可从《重庆邮电大学学报(自然科学版)》浏览原始摘要信息 |
| 点击此处可从《重庆邮电大学学报(自然科学版)》下载免费的PDF全文 |
|
