| 等价的非晶硅隙态密度分布 |
| |
| 引用本文： | 颜一凡,唐元洪.等价的非晶硅隙态密度分布[J].湖南大学学报(自然科学版),1988,15(2). |
| |
| 作者姓名： | 颜一凡 唐元洪 |
| |
| 作者单位： | 湖南大学应用物理系，湖南大学应用物理系 |
| |
| 摘 要： | 本文证明:在某些条件下,描述非晶硅隙态密度的三种基本分布模型,即均匀分布、指数分布和双曲分布,在计算非晶硅隙态过剩电子密度、解金属/非晶硅势垒区泊松方程和计算势垒区静态电容时是等价的。这就暗示不能从上述分析确定唯一的非晶硅隙态密度分布形式。
|
| 关 键 词： | 非晶硅 隙态密度 分布模型 |
The Equivalent Distribution of the Gap State Density of a-Si |
| |
| Yan Yifan Tang Yuanhong.The Equivalent Distribution of the Gap State Density of a-Si[J].Journal of Hunan University(Naturnal Science),1988,15(2). |
| |
| Authors: | Yan Yifan Tang Yuanhong |
| |
| Institution: | Department of Applied Physics |
| |
| Abstract: | In this paper we shall demonstrate that under certain conditions the three basis distribution models to describe the gap state density of a-Si,i.e.uniform distribution,exponential distribution and hyperbolic distrition are all equivalent,for calculating the excess electron density of gap states of a-Si,solving Poission's equation in M/a-Si barrier region and calculating the static capacitance of the barrier region.This suggests that
we can not determine the exact distribution shape of gap state density of
a-Si from the analyses mentioned above. |
| |
| Keywords: | a-Si gap state density distribution model |
| 本文献已被 CNKI 等数据库收录！ |
| 点击此处可从《湖南大学学报(自然科学版)》浏览原始摘要信息 |
| 点击此处可从《湖南大学学报(自然科学版)》下载免费的PDF全文 |
