GaN基Micro-LED量子效率的研究进展

微米级发光二极管（Micro light-emitting diode, Micro-LED）器件具有高亮度、高耐热性、长寿命、低功耗以及极短的响应时间等优点，被视为下一代显示技术的基石，可满足手机、可穿戴手表、AR/VR、微型投影仪、超高亮度显示器等先进设备应用的个性化需求。Micro-LED显示芯片与目前用于高亮度照明的无机半导体芯片具有相似的特性。当管芯直径减小到微米级时，会出现尺寸效应与Droop效应，量子效率急剧下降，器件整体性能受限。介绍了发光二极管的量子效率及影响GaN基Micro-LED量子效率的因素，并提出提升内量子效率和光提取效率的措施，同时对Micro-LED的未来研究与应用进行了总结与展望。

Recent progress on quantum efficiency of GaN-based Microt-LED

Micro light-emitting diode (Micro-LED) devices have the advantages of high brightness, high heat resistance, long life, low power consumption, and extremely short response time, are regarded as the cornerstone of next-generation display technology, and can meet the personalized demands of advanced applications, such as mobile phones, wearable watches, AR/VR, micro-projectors, ultra-high brightness displays, and so on. Micro-LED display chips have similar characteristics to the inorganic semiconductor chips currently used for high brightness lighting. When the tube core core diameter decreases to the micron level, size-effect and Droop-effect appear, the quantum efficiency decreases sharply, and the overall performance of the device is limited. The quantum efficiency of light-emitting diodes and the factors that affect the quantum efficiency of GaN-based Micro-LED were introduced, the measures to improve the internal quantum efficiency and light extraction efficiency were proposed, and the future research and application of Micro-LED were summarized and prospected.