| 门极变电阻式IGBT串联均压电路 |
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| 引用本文： | 梁康,王朝立,张超峰.门极变电阻式IGBT串联均压电路[J].上海理工大学学报,2018,40(1):51-55,64. |
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| 作者姓名： | 梁康 王朝立 张超峰 |
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| 作者单位： | 上海理工大学 光学与计算机工程学院, 上海 200093,上海理工大学 光学与计算机工程学院, 上海 200093,上海理工大学 光学与计算机工程学院, 上海 200093 |
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| 摘 要： | 根据改变IGBT门极驱动电阻可以改变其开关速度的特性,设计出通过改变门极驱动电阻使IGBT串联有效均压的一种方案.此方案利用三极管、电阻、稳压管构成电路拓扑.当IGBT过压或接近过压时,通过检测电路将集射极电压反馈给门极驱动电阻选择电路,驱动电阻选择电路增加门极驱动电阻,从而改变集射极电压变化的速率,使得IGBT均压.仿真分析表明,此串联均压电路能够有效地平衡串联IGBT的电压.
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| 关 键 词： | 电阻 门极驱动 电压均衡 |
| 收稿时间： | 2017/5/26 0:00:00 |
Variable Gate-Resistor-Based Control for the Voltage Balancing of Series-Connected IGBTs |
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| LIANG Kang,WANG Chaoli and ZHANG Chaofeng.Variable Gate-Resistor-Based Control for the Voltage Balancing of Series-Connected IGBTs[J].Journal of University of Shanghai For Science and Technology,2018,40(1):51-55,64. |
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| Authors: | LIANG Kang WANG Chaoli and ZHANG Chaofeng |
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| Institution: | School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China,School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China and School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China |
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| Abstract: | The withstand voltage of a single IGBT can not keep up with the needs of practical application,the IGBT series connect is a simple and effective method to solve the problem,however,the gate drives can not ensure the balanced dynamic voltage sharing between switching devices.According to the characteristic that the IGBT gate drive resistance can change the switching speed,a kind of scheme to improve the IGBT series voltage balance by changing the gate drive resistance was designed.This scheme makes use of transistors,resistors and stabilivolt to form a circuit topology.When the IGBT is over or close to the overvoltage,the collector-emitter voltage is fed back to the gate drive resistance selection circuit through the detection circuit,and the drive resistance selection circuit increases the gate drive resistance to change the collector-emitter voltage,which makes the IGBT voltage equalized. |
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| Keywords: | resistor gate driver voltage sharing |
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