| MEMS开关中氮化硅薄膜工艺研究 |
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| 引用本文： | 许淡清,于映.MEMS开关中氮化硅薄膜工艺研究[J].福州大学学报(自然科学版),2009,37(1). |
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| 作者姓名： | 许淡清 于映 |
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| 作者单位： | 福州大学物理与信息工程学院,福建,福州,350002
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| 摘 要： | 分析了沉积薄膜厚度、PECVD的薄膜沉积温度、反应气体形成的杂质以及多层薄膜之间热应力匹配等因素对薄膜残余应力的影响.应用光刻分割聚酰亚胺(PI)牺牲层、分层生长氮化硅薄膜及快速热退火等工艺减小薄膜残余应力,成功生长出了合格的氮化硅薄膜.
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| 关 键 词： | 氮化硅 薄膜 残余应力 MEMS开关 |
Study on the silicon-nitride film in MEMS switches |
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| XU Dan-qing,YU Ying.Study on the silicon-nitride film in MEMS switches[J].Journal of Fuzhou University(Natural Science Edition),2009,37(1). |
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| Authors: | XU Dan-qing YU Ying |
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| Institution: | College of Physics and Information Engineering;Fuzhou University;Fuzhou;Fujian 350002;China |
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| Abstract: | The factors of exerting effect upon the residual stress were analyzed.These factors basically include the thickness of deposition film,the suitable temperature during PECVD,the contaminations created by reaction gas and the match of the thermal stresses in multi-layers.The residual stresses upon silicon-nitride thin film are controled by dividing the PI sacrificial layer with lithography,depositing by layer as well as rapid thermal annealing.In the end,the qualified film is successfully deposited. |
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| Keywords: | silicon-nitride flim residual stress MEMS switch |
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