| GaAs/AlAs弱耦合掺杂超晶格中存在电流自激振荡的掺杂和电压条件 |
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| 引用本文： | 史正平,何礼熊.GaAs/AlAs弱耦合掺杂超晶格中存在电流自激振荡的掺杂和电压条件[J].福州大学学报(自然科学版),2002,30(1):39-42. |
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| 作者姓名： | 史正平 何礼熊 |
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| 作者单位： | 福州大学信息科学与技术学院,福建,福州,350002 |
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| 摘 要： | 结合宏观和微观模型 ,对GaAs AlAs弱耦合掺杂超晶格的纵向输运问题进行模拟计算 ,并给出产生电流自激振荡时的掺杂浓度和固定偏压的范围 .计算结果与实验数据基本吻合
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| 关 键 词： | 超晶格 振荡 NDV 场畴 |
| 文章编号： | 1000-2243(2002)01-0039-04 |
| 修稿时间： | 2001年7月10日 |
Doping and bias conditions of the self-oscillation in doped GaAs/AlAs superlattice with weak coupling |
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| SHI Zheng-ping,HE Li-xiong.Doping and bias conditions of the self-oscillation in doped GaAs/AlAs superlattice with weak coupling[J].Journal of Fuzhou University(Natural Science Edition),2002,30(1):39-42. |
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| Authors: | SHI Zheng-ping HE Li-xiong |
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| Institution: | (College of Information Science and Technology, Fuzhou University, Fuzhou, Fujian 350002, China) |
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| Abstract: | Vertical transport in doped GaAs/AlAs superlattice with weak coupling is simulated by combining the macroscopic model with the microscopic one. The range of doping concentration and the voltage within which the spontaneous current oscillation is induced under the fixed applied voltage is also obtained. The result is consistent with the experimental data. |
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| Keywords: | superlattice oscillation NDV field domain |
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