| Cu2ZnSnS4/Zn(O,S)异质结薄膜太阳电池的数值仿真研究 |
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| 引用本文： | 张红,程树英,周海芳,俞金玲,贾宏杰,吴丽君.Cu2ZnSnS4/Zn(O,S)异质结薄膜太阳电池的数值仿真研究[J].福州大学学报(自然科学版),2017,45(3). |
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| 作者姓名： | 张红 程树英 周海芳 俞金玲 贾宏杰 吴丽君 |
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| 作者单位： | 福州大学物理与信息工程学院微纳器件与电池研究所,福州大学物理与信息工程学院微纳器件与电池研究所,福州大学物理与信息工程学院微纳器件与电池研究所,福州大学物理与信息工程学院微纳器件与电池研究所,福州大学物理与信息工程学院微纳器件与电池研究所,福州大学物理与信息工程学院微纳器件与电池研究所 |
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| 基金项目： | 国家自然科学基金(No. 61574038)、福建省科技厅(No. 2015H0021)、福建省教育厅科研基金(No. JA15092)和福州大学贵重仪器设备开放测试基金资助项目(No. 2016T042) |
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| 摘 要： | Zn(O,S)具有带隙宽、原料丰富且环保的优点,是一种很有潜力的CdS替代缓冲层。本文采用Solar Cell Capacitance Simulator (SCAPS)软件,对CZTS/Zn(O,S)/Al:ZnO 结构的薄膜太阳电池进行数值仿真,主要模拟研究Zn(O,S)的禁带宽度和电子亲和势、缓冲层的厚度及掺杂浓度、环境温度对电池性能的影响。结果表明：当Zn(O,S)的厚度和载流子浓度分别为50 nm和1017 cm-3时,电池的转换效率可达14.90％,温度系数为-0.021%/K。仿真结果为Zn(O,S)缓冲层用于CZTS太阳能电池提供了一定的指导。
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| 关 键 词： | CZTS Zn(O S) SCAPS |
| 收稿时间： | 2016/3/30 0:00:00 |
| 修稿时间： | 2016/7/4 0:00:00 |
Numerical simulation Cu2ZnSnS4/Zn(O,S) heterojunction thin film solar cells |
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| Hong Zhang,Shuying Cheng,Haifang Zhou,Jinling Yu,Hongjie Jia and Lijun Wu.Numerical simulation Cu2ZnSnS4/Zn(O,S) heterojunction thin film solar cells[J].Journal of Fuzhou University(Natural Science Edition),2017,45(3). |
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| Authors: | Hong Zhang Shuying Cheng Haifang Zhou Jinling Yu Hongjie Jia and Lijun Wu |
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| Institution: | Institute of Micro-Nano Devices and Solar Cells,College of Physics and Information Engineering,Fuzhou University,Fuzhou,Institute of Micro-Nano Devices and Solar Cells,College of Physics and Information Engineering,Fuzhou University,Fuzhou,Institute of Micro-Nano Devices and Solar Cells,College of Physics and Information Engineering,Fuzhou University,Fuzhou,Institute of Micro-Nano Devices and Solar Cells,College of Physics and Information Engineering,Fuzhou University,Fuzhou,Institute of Micro-Nano Devices and Solar Cells,College of Physics and Information Engineering,Fuzhou University,Fuzhou,Institute of Micro-Nano Devices and Solar Cells,College of Physics and Information Engineering,Fuzhou University,Fuzhou |
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| Abstract: | Zn(O,S) is an attractive alternative to CdS as a buffer layer of Cu2ZnSnS4 (CZTS) based solar cell due to its broader band gap and environmental friendliness. In this paper CZTS solar cell with a structure of CZTS/Zn(O,S)/Al:ZnO was simulated by Solar Cell Capacitance Simulator (SCAPS). The impacts of band gap, electron affinity, thickness, donor concentration of Zn(O,S) and operating temperature on the performance of CZTS solar cells were investigated. It has been obtained that the optimum thickness of Zn(O,S) is about 50 nm. The suitable doping concentration of Zn(O,S) is around 1017 cm-3. The temperature coefficient of efficiency is about -0.021%/K in the CZTS solar cell. All these simulation results will provide some important guidelines for fabricating high efficient CZTS solar cells. |
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| Keywords: | CZTS thin film solar cells Zn(O S) buffer layers SCAPS |
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