| 硫化温度对两步法制备FeS2薄膜性能的影响 |
| |
| 引用本文： | 钟南保,程树英.硫化温度对两步法制备FeS2薄膜性能的影响[J].江西科学,2006,24(3):245-248. |
| |
| 作者姓名： | 钟南保 程树英 |
| |
| 作者单位： | 1. 南京军区福州总医院放疗科,福建,福州,350002
2. 福州大学物理电信学院,福建,福州,350002 |
| |
| 摘 要： | 在553 K、573 K、603 K、653 K、673 K硫化温度下用两步法制备FeS2薄膜。分析了所制薄膜的结构及光电性能等,同时还研究了硫化温度对两步法制备FeS2薄膜的影响规律。
|
| 关 键 词： | 薄膜 二硫化铁 硫化温度 |
| 文章编号： | 1001-3679(2006)03-0245-04 |
| 收稿时间： | 2005-09-26 |
| 修稿时间： | 2006-03-04 |
The Effect of Sulfuration Temperature on the Characteristics of FeS2 Thin Films Prepared by Two Steps |
| |
| ZHONG Nan-bao,CHENG Shu-ying.The Effect of Sulfuration Temperature on the Characteristics of FeS2 Thin Films Prepared by Two Steps[J].Jiangxi Science,2006,24(3):245-248. |
| |
| Authors: | ZHONG Nan-bao CHENG Shu-ying |
| |
| Institution: | 1. Radiotherapy Department of Fuzhou General Hospital Nanjing Command, Fujian Fuzhou 350002 PRC; 2, Physics and Telecommunication College of Fuzhou University,Fujian Fuzhou 350002 PRC |
| |
| Abstract: | Thin films of FeS_2 were prepared by two steps at different sulfuration temperature of 553 K,573 K,603 K,653 K and 673 K.The structure and optical and electrical characteristics of the prepared thin films were analyzed.The effect of sulfuration temperature on the thin films was also studied in this paper. |
| |
| Keywords: | Thin film Pyrite Sulfuration temperature |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
