| 场限环耐压的准三维优化分析 |
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| 引用本文： | 唐本奇,高玉民.场限环耐压的准三维优化分析[J].西安交通大学学报,1998,32(3):5-8. |
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| 作者姓名： | 唐本奇 高玉民 |
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| 作者单位： | 西安交通大学 |
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| 摘 要： | 分析和讨论了圆弧形掩膜的曲率半径对平面结终端耐压特点的影响．首次通过解析的方法，推导出了在计及平面结横向曲率效应，即准三维效应的条件下，优化单场限环结构击穿电压的归一化表达式，以及场限环间距的优化公式．本方法简便直观，可以直接用于场限环结构的优化设计．
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| 关 键 词： | 场限环 横向曲率 击穿电压 环间距 |
The Quasi Three Dimensional Optimum Analysis of Breakdown Voltage of Floating Field Limiting Rings |
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| Tang Benqi,Gao Yumin,Luo Jinsheng.The Quasi Three Dimensional Optimum Analysis of Breakdown Voltage of Floating Field Limiting Rings[J].Journal of Xi'an Jiaotong University,1998,32(3):5-8. |
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| Authors: | Tang Benqi Gao Yumin Luo Jinsheng |
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| Abstract: | The effects of lateral radius of window curvature on the breakdown voltage of FLR's are analyzed and discussed by analytical approach for the first time,and the normalized expression of the breakdown voltage of planar junctions terminated with a single optimally placed FLR, and the equation to determine the optimal spacing of the field ring are derived. The accuracy of analytical expressions is verified by comparison with the quasi3D numerical simulation results in the published papers. This approach can be used directly and conveniently in the optimum design for FLR's structure. |
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| Keywords: | field limiting ring lateral radius breakdown voltage spacing of rings |
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