CaBi4Ti4O15基陶瓷制备与镧掺杂的性能优化

两步法烧结制备一系列CaBi4-xLaxTi4O15（x=0，0．1，0．2，0．3，0．4）（CBLT—X）：以氧化物为前驱体用熔盐法合成片状粉体，然后通过晶体定向技术制备后烧结成陶瓷．通过SEM微观结构表征来确定增加镧掺杂和温度对晶粒生长和织构形成的影响．当镧掺杂（z=0．4）烧结温度在1150℃时，CBLT—X陶瓷在垂直于流延方向上介电常数可提高到570．CBLT—X系列陶瓷的介电常数和介电损耗在垂直于流延的方向的数值都高于平行方向上．控制CBLT—X陶瓷结构化和晶粒生长的机理首次用3D模式进行了讨论．

Preparation of textured CaBi4Ti4O15 based ceramics and dielectric properties optimized with La3+ doping

A batch of 〈 001 〉 -textured CaBi4-xLaxTi4O15 （x = 0,0.1,0.2,0.3,0.4） （CBLT-x） ceramics were fabricated by a two-step sintering method： synthesizing seed-crystal platelets by molten-salt method with oxide mixture as precursor, and then sintering the platelets via grain orientation technique （OCAP）. Microstructural characterization by SEM was performed to establish the effect of increased doping of La3＋ and sintering temperature on grain growth and texture development. Increasing sintered at 1150℃ in th La3＋ （ to x = 0.4 ） resulted in dielectric constant improvement up to 570 e direction perpendicular to the tape-casting plan. The dielectric constant as well as loss of CBLT-x samples in the perpendicular direction is higher than that of parallel plane. The mechanism controlling the texture and grain growth in CBLT-x ceramics is firstly discussed by 3D patterns in this letter.