| 基于ANFIS方法的连续定向凝固BFe10-1-1合金的压缩流变应力模型 |
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| 引用本文： | 甘春雷,刘雪峰,黄海友,谢建新.基于ANFIS方法的连续定向凝固BFe10-1-1合金的压缩流变应力模型[J].北京科技大学学报,2011,33(5):600-605. |
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| 作者姓名： | 甘春雷 刘雪峰 黄海友 谢建新 |
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| 作者单位： | 北京科技大学材料先进制备技术教育部重点试验室,北京,100083 |
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| 基金项目： | 国家自然科学基金重点资助项目 |
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| 摘 要： | Silver in the form of AgNO3 was added to ZnO-based varistor ceramics prepared by the solid-state reaction method.The effects of AgNO3 on both the microstructure and electrical properties of the varistors were studied in detail.The optimum addition amount of AgNO3 in ZnO-based varistors was also determined.The mechanism for grain growth inhibition by silver doping was also proposed.The results indicate that the varistor threshold voltage increases substantially along with the AgNO3 content increasing from 0 to 1.5mol%.Also,the introduction of AgNO3 can depress the mean grain size of ZnO,which is mainly responsible for the threshold voltage.Furthermore,the addition of AgNO3 results in a slight decrease of donor density and a more severe fall in the density of interface states,which cause a decline in barrier height and an increase in the depletion layer.
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| 关 键 词： | ceramic materials varistors silver microstructure electrical properties zinc oxide |
Compressive flow stress model of BFe10-1-1 alloy fabricated by continuous unidirectional solidification process using ANFIS |
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| GAN Chun-lei,LIU Xue-feng,HUANG Hai-you,XIE Jian-xin.Compressive flow stress model of BFe10-1-1 alloy fabricated by continuous unidirectional solidification process using ANFIS[J].Journal of University of Science and Technology Beijing,2011,33(5):600-605. |
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| Authors: | GAN Chun-lei LIU Xue-feng HUANG Hai-you XIE Jian-xin |
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| Institution: | Key Laboratory of the Ministry of Education of China for Advanced Materials Processing, University of Science and Technology Beijing, Beijing 100083, China |
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| Abstract: | Silver in the form of AgNO3 was added to ZnO-based varistor ceramics prepared by the solid-state reaction method.The effects of AgNO3 on both the microstructure and electrical properties of the varistors were studied in detail.The optimum addition amount of AgNO3 in ZnO-based varistors was also determined.The mechanism for grain growth inhibition by silver doping was also proposed.The results indicate that the varistor threshold voltage increases substantially along with the AgNO3 content increasing from 0 to 1.5mol%.Also,the introduction of AgNO3 can depress the mean grain size of ZnO,which is mainly responsible for the threshold voltage.Furthermore,the addition of AgNO3 results in a slight decrease of donor density and a more severe fall in the density of interface states,which cause a decline in barrier height and an increase in the depletion layer. |
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| Keywords: | ceramic materials varistors silver microstructure electrical properties zinc oxide |
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