| ZnS:TmF3薄膜电致发光特性的研究 |
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| 引用本文： | 苑庆国,杨胜,何大伟,成正维.ZnS:TmF3薄膜电致发光特性的研究[J].北京交通大学学报(自然科学版),2001,25(3):70-72. |
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| 作者姓名： | 苑庆国 杨胜 何大伟 成正维 |
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| 作者单位： | 北方交通大学光电子技术研究所, |
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| 基金项目： | 国家自然科学基金;59982001; |
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| 摘 要： | 为了提高蓝色薄膜电致发光器件(TFEL)的发光亮度,自行配制了氟化铥(TmF3),并制备了以ZnS:TmF3为发光层的薄膜电致发光器件,研究了TmF3的掺杂浓度对ZnS:TmF3 发光器件发光特性的影响.实验结果显示,当掺杂浓度为1.2%mol时,发光亮度最强.
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| 关 键 词： | 薄膜电致发光(TFEL) 氟化铥 掺杂浓度 |
| 文章编号： | 1000-1506(2001)03-0070-03 |
| 修稿时间： | 2000年9月16日 |
The Research on the EL Characteristics of ZnS: TmF3 TFEL Devices |
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| YUAN Qing-guo,YANG Sheng,HE Da-wei,CHENG Zheng_wei.The Research on the EL Characteristics of ZnS: TmF3 TFEL Devices[J].JOURNAL OF BEIJING JIAOTONG UNIVERSITY,2001,25(3):70-72. |
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| Authors: | YUAN Qing-guo YANG Sheng HE Da-wei CHENG Zheng_wei |
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| Abstract: | In order to increase the electroluminescent brightness of blue thin film electrolumincent device, the ZnS doped with TmF 3 are prepared from solid state reaction and the thin film electroluminescence devices with ZnS:TmF 3 active layer are prepared by electron_beam_evaporation method in our lab. We have investigated the influence of TmF 3 concentration on the electroluminescent characteristics of ZnS:TmF 3 TFEL device. With increasing TmF 3 concentration the relative intensity of the ZnS:TmF 3 increases and reaches maximum. The optimum concentration is at about 1.2% mol. |
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| Keywords: | Thin Film Electroluminescence(TFEL) TmF 3 doped concentration |
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