| 过渡金属原子在半导体表面上化学吸附理论 |
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| 引用本文： | 丛书林.过渡金属原子在半导体表面上化学吸附理论[J].辽宁大学学报(自然科学版),1990,17(1):34-44. |
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| 作者姓名： | 丛书林 |
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| 作者单位： | 抚顺师范专科学校物理系 |
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| 摘 要： | 本文研究了过渡金属原子d轨道同衬底半导体SP杂化轨道之间存在两种不同耦合系数的化学吸附问题，采用自洽的格林函数方法，计算了吸附原子d电子在强、弱耦合态的占据数，化学吸附能、电荷转移及磁性解磁矩。
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| 关 键 词： | 化学吸附 吸附原子 过渡金属原子 强耦合 弱耦合 半导体表面 |
The Chemisorption Theory ofTransition-Metal Atom on Semiconductors |
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| Cong Shulin.The Chemisorption Theory ofTransition-Metal Atom on Semiconductors[J].Journal of Liaoning University(Natural Sciences Edition),1990,17(1):34-44. |
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| Authors: | Cong Shulin |
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| Institution: | Cong Shulin Department of Physics,Fushun Teachers' College |
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| Abstract: | A transition-metal atom chemisorption on the surface of semiconductors is studied when the interaction between d-orbitals of the adatom and sp-hybrid atomic orbitals of the substrate semiconductor theve existed two different coupling constants V_(01) and V_(02). A self-consistent Green's function method is used to calculate occupancy nnmbers of strong and weak coupling states, chemisorption energy, charge transfer and magnetic moment of magnetic solution. |
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| Keywords: | Chemiserption adatom strong(weak)coupling |
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