| 高Al组分AlGaN基紫外LED结构材料 |
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| 引用本文： | 张彬彬,李书平,李金钗,蔡端俊,陈航洋,刘达艺,康俊勇.高Al组分AlGaN基紫外LED结构材料[J].厦门大学学报(自然科学版),2012,51(1):17-21. |
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| 作者姓名： | 张彬彬 李书平 李金钗 蔡端俊 陈航洋 刘达艺 康俊勇 |
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| 作者单位： | 厦门大学物理与机电工程学院,福建厦门,361005 |
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| 基金项目： | 国家自然科学基金项目，国家重点基础研究发展计划(973)项目 |
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| 摘 要： | 采用金属有机物气相外延(MOVPE)技术在c面蓝宝石衬底上,引入脉冲原子层外延技术,制备了一系列表面平整度较高的高Al组分AlGaN基异质结构外延片.并采用电子束金属蒸镀技术及优化热退火方法,获得了良好的欧姆接触电极,进一步将外延片制备成LED管芯.通过对量子结构有源层量子阱混晶组分的设计和调整,掌握并实现了主波长260～330 nm紫外LED结构材料的制备.
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| 关 键 词： | AlGaN 量子阱 欧姆接触 紫外LED |
High Al Content AlGaN Based LED Functional Structures |
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| ZHANG Bin-bin
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LI Shu-ping
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LI Jin-chai
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CAI Duan-jun
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CHEN Hang-yang
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LIU Da-yi
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KANG Jun-yong.High Al Content AlGaN Based LED Functional Structures[J].Journal of Xiamen University(Natural Science),2012,51(1):17-21. |
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| Authors: | ZHANG Bin-bin LI Shu-ping LI Jin-chai CAI Duan-jun CHEN Hang-yang LIU Da-yi KANG Jun-yong |
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| Institution: | (School of Physics and Mechanical & Electrical Engineering,Xiamen University,Xiamen 361005,China) |
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| Abstract: | High Al content AlGaN-based ultraviolet light-emitting diode(LED) structures were grown on sapphire substrate by metal organic vapor-phase epitaxy(MOVPE).The pulsed atomic layer epitaxy technology was adopted to improve the crystal quality.Ohmic contacts for the LED devices were obtained by optimizing the annealing conditions.The UV-LEDs with different wavelength(from 260 nm to 330 nm) were achieved by tuning the Al content. |
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| Keywords: | AlGaN quantum well ohmic contact UV-LED |
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