| 压电效应对软基体上压电薄膜局部和整体屈曲的影响 |
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| 引用本文： | 付志鹏,蒋泉,周志东.压电效应对软基体上压电薄膜局部和整体屈曲的影响[J].厦门大学学报(自然科学版),2012,51(5):824-828. |
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| 作者姓名： | 付志鹏 蒋泉 周志东 |
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| 作者单位： | 1. 厦门大学材料学院,福建省特种先进材料重点实验室,福建厦门361005
2. 南通大学建筑工程学院,江苏南通,226019 |
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| 基金项目： | 国家自然科学基金项目(10802070,10902055,11172252);福建省自然科学基金项目(2011J01329) |
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| 摘 要： | 附于预拉伸软基体上的弹性薄膜会发生局部屈曲,将这一特性应用于微纳米系统,可以发明新的可延展性电子器件.通过变分法推导了压电薄膜/软弹性基板复合系统的控制方程,分析了基体预拉伸情况下的压电薄膜/基体复合系统的整体屈曲机制.进一步研究了局部屈曲和整体屈曲的转换现象,得到了2种屈曲模式临界条件的解析解.结果发现,薄膜材料的压电效应对整体屈曲和局部屈曲2种屈曲模式的临界条件都具有不可忽略的影响,压电薄膜系统比弹性薄膜系统具有更高的刚度和更好的稳定性.
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| 关 键 词： | 局部/整体屈曲 压电薄膜 压电效应 临界条件 |
The Effect of Piezoelectricity on Local and Global Buckling for Thin Piezoelectric Films on Soft Elastic Substrates |
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| FU Zhi-peng
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JIANG Quan
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ZHOU Zhi-dong.The Effect of Piezoelectricity on Local and Global Buckling for Thin Piezoelectric Films on Soft Elastic Substrates[J].Journal of Xiamen University(Natural Science),2012,51(5):824-828. |
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| Authors: | FU Zhi-peng JIANG Quan ZHOU Zhi-dong |
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| Institution: | 1(1.Fujian Key Laboratory of Advanced Materials,College of Materials,Xiamen University,Xiamen 361005,China; 2.College of Civil Engineering,Nantong University,Nantong 226019,China) |
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| Abstract: | The elastic thin films on pre-stretched compliant substrates can form wrinkles,which can be controlled in micro-nanoscale systems to generate new stretchable electron devices.This paper deduces the governing equations for the structure of piezoelectric film and soft elastomeric plate by variational principle.The mechanics of global buckling is analyzed for piezoelectric thin films bonded to the pre-stretched compliant layer.The conversion phenomenon between the local and global buckling is further investigated.The critical condition between the two buckling modes is obtained analytically.The effect of piezoelectricity on two buckling modes and the critical condition is examined.It is found that the piezoelectricity has a negligible effect on the buckling,and the piezoelectric system is more rigidity and stability than the elastic system. |
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| Keywords: | local/global buckling piezoelectric thin film piezoelectricity critical condition |
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