| 自持金刚石厚膜上沉积N掺杂ZnO薄膜的生长及电学特性 |
| |
| 引用本文： | 孙剑,白亦真,杨天鹏,孙景昌,杜国同.自持金刚石厚膜上沉积N掺杂ZnO薄膜的生长及电学特性[J].吉林大学学报(理学版),2007,45(5):822-826. |
| |
| 作者姓名： | 孙剑 白亦真 杨天鹏 孙景昌 杜国同 |
| |
| 作者单位： | 1. 大连理工大学 三束材料改性国家重点实验室, 辽宁省 大连116023; 2. 大连理工大学 物理与光电工程学院, 辽宁省 大连116023; 3. 吉林大学 集成光电子国家重点实验室, 电子科学与工程学院, 长春 130012 |
| |
| 摘 要： | 采用金属有机化合物气相沉积(MOCVD)两步生长法在自持化学气相沉积(CVD)金刚石厚膜的成核面上制备ZnO薄膜, 并研究了薄膜的生长特性和电学特性. 结果表明, 在基片温度为600 ℃时沉积得到的ZnO薄膜表面均匀, 取向较一致, 为c轴取向生长. 其载流子迁移率为3.79 cm2/(V·s).
|
| 关 键 词： | 声表面波滤波器 金刚石 ZnO薄膜 金属有机化合物气相沉积 |
| 文章编号： | 1671-5489（2007）05-0822-05 |
| 收稿时间： | 2006-11-01 |
| 修稿时间： | 2006-11-01 |
Growth and Electrical Properties of ZnO Films Deposited on Freestanding Thick Diamond Films |
| |
| SUN Jian,BAI Yi-zhen,YANG Tian-peng,SUN Jing-chang,DU Guo-tong.Growth and Electrical Properties of ZnO Films Deposited on Freestanding Thick Diamond Films[J].Journal of Jilin University: Sci Ed,2007,45(5):822-826. |
| |
| Authors: | SUN Jian BAI Yi-zhen YANG Tian-peng SUN Jing-chang DU Guo-tong |
| |
| Institution: | 1. State Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Dalian 116023, Liaoning Province, China; 2. College of Physics and Opto\|electronic Engineering, Dalian University of Technology, Dalian 116023, China; 3. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China |
| |
| Abstract: | ZnO thin films were prepared on the smooth nucleation surfaces of freestanding CVD thick diamond films by metal organic chemical vapor deposition (MOCVD) with two-step growth method. The growth and electrical properties of the ZnO films are characterized experimentally. The ZnO film deposited at a substrate temperature of 600 ℃ exhibited a clean surface with c-preferred orientation and had a mobility of 3.79 cm2/(V·s). |
| |
| Keywords: | SAW filter diamond ZnO film metal organic chemical vapor deposition |
| 本文献已被 维普 万方数据 等数据库收录！ |
| 点击此处可从《吉林大学学报(理学版)》浏览原始摘要信息 |
| 点击此处可从《吉林大学学报(理学版)》下载免费的PDF全文 |
