| 6H-SiC衬底上InN单晶薄膜的RF-MBE生长 |
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| 引用本文： | 沈春生,吴国光,高福斌,马艳,杜国同,李万程.6H-SiC衬底上InN单晶薄膜的RF-MBE生长[J].吉林大学学报(理学版),2012,50(6):1247-1251. |
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| 作者姓名： | 沈春生 吴国光 高福斌 马艳 杜国同 李万程 |
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| 作者单位： | 吉林大学 电子科学与工程学院, ,集成光电子学国家重点联合实验室, 长春 130012 |
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| 基金项目： | 国家自然科学基金(批准号:60877020;60976010) |
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| 摘 要： | 采用射频等离子体辅助分子束外延(RF\|MBE)方法在6H\|SiC衬底上制备纤锌矿结构的氮化铟（InN）薄膜. 利用原位X射线光电子能谱测试确定了InN的修正俄歇参数α′=852.76 eV和Wagner图, InN的铟氮质量比为1.19; 扫描电子显微镜和原子力显微镜测试表明, 外延InN为网状结构, 表面无铟滴; X射线衍射测试表明, 薄膜为单一c轴择优取向生长, 其摇摆曲线半高宽为32.6 弧分; 室温光致发光峰中心位于1 575 nm处.
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| 关 键 词： | 分子束外延 氮化铟 碳化硅 光电子能谱 X射线衍射 光致发光 |
| 收稿时间： | 2011-10-27 |
InN Films Grown on 6H-SiC by Radio Frequency Plasma-Assisted Molecular Beam Epitaxy |
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| SHEN Chun-sheng,WU Guo-guang,GAO Fu-bin,MA Yan,DU Guo-tong,LI Wan-cheng.InN Films Grown on 6H-SiC by Radio Frequency Plasma-Assisted Molecular Beam Epitaxy[J].Journal of Jilin University: Sci Ed,2012,50(6):1247-1251. |
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| Authors: | SHEN Chun-sheng WU Guo-guang GAO Fu-bin MA Yan DU Guo-tong LI Wan-cheng |
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| Institution: | State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China |
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| Abstract: | The growth of wurtzite indium nitride (InN) films was investigated by means of radio\|frequency plasma-assisted molecular beam epitaxy (RF\|MBE) on 6H\|SiC substrates. In\|situ X-ray photoelectron spectra were used to determine the Wagner plot of InN. The auger parameter α′ is 85276 eV. The mass radio of In to N in InN is 1.19; the sample surface of InN/6H\|SiC, observed by an scanning electron microscope and atomic force microscope, is reticular structure without indium droplets; X-ray diffraction results show that the films have a preferential c-axis orientation normal to the substrate surface, FWHM of InN (0002) rocking curve is 326 arcmin; and the room temperature photoluminescence peak is at about 1 575 nm. |
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| Keywords: | molecular beam epitaxy InN 6H-SiC photoelectron spectra X-ray diffraction photoluminescence |
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