界面电子转移对纳米TiO2薄膜导电性的影响

研究纳米TiO₂薄膜的导电性与薄膜厚度和基底材料的关系. 结果表明， 沉积在Ti和Si基底上的TiO₂薄膜的电阻率随着膜厚的 增加而非线性增大, 分别经历了导体、 半导体到绝缘体或半导体到绝缘体的电阻率范围的变化过程， Ti O₂薄膜导电层厚度也不相同， 沉积在玻璃表面TiO₂薄膜为绝缘体. 这些现象是界面电子在界面的转移所致， 基底材料与薄膜功函数差的大小决定了导电层厚度.

Influence of Interface Electrons Transfer on Conductivity of Nanometer TiO2 Thin Films

The present paper presents the dependence of the conductivity of TiO 2 thin films on the different substrates and on the thickness of the films. It was found that the resistivity of the TiO 2 thin films deposited on Ti and Si substrates increased non-linearly with the increase of the thickness of the films and varied in the range from conductor or semiconductor to nonconductor, respectively. The conducting layer thickness of the films deposited on different substarte materials is different and the films deposited on glass are nonconductors. This is attributed to interface electrons transfer, and the conducting layer thickness is determined by the work function difference between substrates and thin films.