| 采用热壁外延技术在GaAs衬底上生长CdTe单晶薄膜 |
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| 引用本文： | 孟庆巨,吴连民,赵永生,杨玉琨.采用热壁外延技术在GaAs衬底上生长CdTe单晶薄膜[J].吉林大学学报(理学版),1988(4). |
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| 作者姓名： | 孟庆巨 吴连民 赵永生 杨玉琨 |
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| 作者单位： | 吉林大学分析测试实验中心
(孟庆巨，吴连民，赵永生)，吉林大学分析测试实验中心(杨玉琨) |
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| 基金项目： | 吉林省科委资助部分经费 |
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| 摘 要： | 我们采用自行设计制造的热壁外延(HWE)装置在GaAs(100)衬底上生长了CdTe晶膜。分析测试表明,该膜为(100)单晶膜。HWE技术生长的CdTe/GaAs结构为外延生长HgCdTe提供了十分合适的衬底。 外延源是用99.999％的cd和Te,在10~(-4)Pa真空,800～1000℃温度下煅烧100h而获得的CdTe多晶。衬底采用(100)GaAs单晶片,解理成6×6 mm~2方块。清洁处理
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| 关 键 词： | 热壁外延 锑化镉/砷化镓 单晶薄膜 |
Growth of Single Crystal Films of CdTe on GaAs Substrates by Hot Wall Epitary (HWE) |
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| Meng Qingju,Wu Lianmin,Zhao Rongsheng and Yang Yukun.Growth of Single Crystal Films of CdTe on GaAs Substrates by Hot Wall Epitary (HWE)[J].Journal of Jilin University: Sci Ed,1988(4). |
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| Authors: | Meng Qingju Wu Lianmin Zhao Rongsheng and Yang Yukun |
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| Abstract: | Epitaxial layers of CdTe were grown on GaAs(100) substrates by HWE system that was designed and made by ourselves. Analysis and measurements show that the epitexial layers are single crystal films in (100) orientation. The growth of CdTe/GaAs structure by HWE is the first time in China till now and it will provide available substrate materials for the growth of HgCdTe. |
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| Keywords: | hot wall epitary CdTe/GaAs single crystal films |
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