| 分光光度法测定Ga_xIn_(1-x)As_(1-y)P_y外延层中x,y值 |
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| 引用本文： | 张国娟,刘向辉,张隽.分光光度法测定Ga_xIn_(1-x)As_(1-y)P_y外延层中x,y值[J].吉林大学学报(理学版),1987(4). |
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| 作者姓名： | 张国娟 刘向辉 张隽 |
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| 作者单位： | 吉林大学电子科学系
(张国娟，刘向辉)，吉林大学电子科学系(张隽) |
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| 摘 要： | 本文研究了在銦、砷同时存在的情况下,用分光光度法直接测定镓和磷的显色条件,并应用于测定Ga_xIn_(1-x)As_(1-y)P_y外延层中的x,y值。
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| 关 键 词： | 外延层 分光光度 |
Determination of x, y Values in Epitaxial Layer by Photmetric Method |
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| Zhang Guojuan,Liu Xianghui and Zhang Jun.Determination of x, y Values in Epitaxial Layer by Photmetric Method[J].Journal of Jilin University: Sci Ed,1987(4). |
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| Authors: | Zhang Guojuan Liu Xianghui and Zhang Jun |
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| Abstract: | In this article the study of the condition for diract determination of gallium and phosphorus in the presence of indium and arsenic using photometric method is described. It has been applied to the determination of x,y values in epitaxial layer of Ga_xIn_(1-x)As_(1-y)P-y. |
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| Keywords: | epitaxial photmetric |
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