| 半导体高功率量子阱激光器退火后的电噪声 |
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| 引用本文： | 石英学,李靖,郭树旭,张素梅,王雪丹,石家纬.半导体高功率量子阱激光器退火后的电噪声[J].吉林大学学报(理学版),2004,42(4):600-602. |
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| 作者姓名： | 石英学 李靖 郭树旭 张素梅 王雪丹 石家纬 |
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| 作者单位： | 集成光电子学国家重点联合实验室, 吉林大学电子科学与工程学院, 长春 130023 |
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| 摘 要： | 在环境温度和工作电流下, 对808 nm高功率量子阱激光器进行老化实验, 发现在老化过程中一些劣质器件电噪声谱密度呈下降趋势, 产生退火效应. 本文应用初始性缺陷（高温高能条件下所形成的缺陷）和非初始性缺陷理论, 探讨了器件发生退火及早期失效的原因.
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| 关 键 词： | 半导体激光器 噪声 退火 |
| 文章编号： | 1671-5489(2004)04-0600-03 |
| 收稿时间： | 2004-01-05 |
| 修稿时间： | 2004年1月5日 |
Electric noise of high-power quantum well semiconductor lasers after annealing |
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| SHI Ying-xue,LI Jing,GUO Shu-xu,ZHANG Su-mei,WANG Xue-dan,SHI Jia-wei c Science and Engineering,Jilin University,Changchun ,China.Electric noise of high-power quantum well semiconductor lasers after annealing[J].Journal of Jilin University: Sci Ed,2004,42(4):600-602. |
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| Authors: | SHI Ying-xue LI Jing GUO Shu-xu ZHANG Su-mei WANG Xue-dan SHI Jia-wei c Science and Engineering Jilin University Changchun China |
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| Institution: | State Key United Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering,Jilin University, Changchun 130023, China |
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| Abstract: | The electric noise spectral density of 808 nm high-power quantum well semiconductor laser diode showed a descending trend on aging process, producing annealing effect. In this paper, by inducing the theory of initial defect(It is induced by high temperature and high stress)and non-initial defect, the reason of producing the annealing and forepart failure is discussed. |
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| Keywords: | semiconductor laser noise annealing |
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