| 单晶硅衬底上金刚石成核密度的研究 |
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| 引用本文： | 金曾孙,于三,吕宪义,黄甫萍,邹广田.单晶硅衬底上金刚石成核密度的研究[J].吉林大学学报(理学版),1990(3). |
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| 作者姓名： | 金曾孙 于三 吕宪义 黄甫萍 邹广田 |
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| 作者单位： | 吉林大学原子与分子物理研究所
(金曾孙，于三，吕宪义，黄甫萍)，吉林大学原子与分子物理研究所(邹广田) |
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| 摘 要： | 本文研究了用热灯丝化学气相沉积方法在单晶硅衬底上制备金刚石薄膜时其成核密度与制备条件的关系。结果表明,衬底表面状态、衬底温度、灯丝温度、灯丝与衬底表面间距离等对金刚石成核密度有明显的影响,且表面状态的影响最大。
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| 关 键 词： | 热灯丝化学气相沉积 金刚石薄膜 成核密度 |
The Study of Diamond Nucleation Density on Single Crystal Silicon Substrate |
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| Jin Zengsun,Yu San,Lu Xianyi,Huang Fuping and Zou Guangtian.The Study of Diamond Nucleation Density on Single Crystal Silicon Substrate[J].Journal of Jilin University: Sci Ed,1990(3). |
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| Authors: | Jin Zengsun Yu San Lu Xianyi Huang Fuping and Zou Guangtian |
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| Abstract: | In the present paper, the relation between diamond nucleation density and synthesis conditions is studied for the diamond thin film synthesized by hot filament chemical vapour deposition method. The experimental results show that the state of substrate surface has the most evident effects on diamond nucleation density. The substrate temperature, filament temperature and distance from filament to substrate surface also have evident effects on diamond nucleation density. |
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| Keywords: | hot filament Chemical Vapour Deposition diamond thin film nucleation density |
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