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| 体硅阳极和薄膜微晶硅阳极聚合物顶发光白光器件 | |
| 引用本文： | 谷永涛,魏峰,孙拓,徐万劲,冉广照,章勇,牛巧利,秦国刚.体硅阳极和薄膜微晶硅阳极聚合物顶发光白光器件[J].北京大学学报(自然科学版),2012,48(2):173-176. |
| 作者姓名： | 谷永涛 魏峰 孙拓 徐万劲 冉广照 章勇 牛巧利 秦国刚 |
| 作者单位： | 1. 北京大学物理学院介观物理国家重点实验室,北京,100871 2. 华南师范大学光电子材料与技术研究所,广州,510631 3. 北京大学物理学院介观物理国家重点实验室,北京100871／华南师范大学光电子材料与技术研究所,广州510631 |
| 摘 要： | 分别以p型体硅和p型薄膜微晶硅为阳极,以掺入MEH-PPV的PFO为发光层,以透明金属Sm/Au为阴极,制作了顶发光白光器件。器件结构是:硅阳极/PEDOT:PSS/MEH-PPV:PFO/Cs2CO3/Sm/Au。通过调节MEH-PPV在PFO中的质量百分比,改进了白光器件的发射色度。当MEH-PPV的质量百分比为0.13%时,发光在白光范围,CIE色坐标为(0.372,0.391)。研究了器件发光效率对体硅阳极电阻率的影响,当体硅阳极电阻率为0.079.cm时,器件电流效率和功率效率都达到极大,分别是0.191 cd/A和0.131 lm/W。以金属Ni诱导硅晶化的薄膜微晶硅为阳极,通过调节Ni层厚度,优化器件效率。当Ni层厚度为2 nm时,薄膜硅阳极器件的电流效率和功率效率分别达到最大值:0.371 cd/A和0.187 lm/W,相对于最佳电阻率体硅阳极器件分别提高了94%和43%。 |
| 关 键 词： | 聚合物白光 p型体硅 薄膜微晶硅 MEH-PPV PFO |
Polymer White Light-Emitting Diodes with p-Type Si Anode and Nanometer-Thick Polycrystalline p-Si Anode |
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| GU Yongtao,WEI Feng,SUN Tuo,XU Wanjin,RAN Guangzhao,ZHANG Yong,NIU Qiaoli,QIN Guogang.Polymer White Light-Emitting Diodes with p-Type Si Anode and Nanometer-Thick Polycrystalline p-Si Anode[J].Acta Scientiarum Naturalium Universitatis Pekinensis,2012,48(2):173-176. | |
| Authors: | GU Yongtao WEI Feng SUN Tuo XU Wanjin RAN Guangzhao ZHANG Yong NIU Qiaoli QIN Guogang |
| Institution: | 1,2,1.State Key Laboratory for Mesoscopic Physics,School of Physics,Peking University,Beijing 100871;2.Institute of Optoelectronic Materials and Technology,South China Normal University,Guangzhou 510631 |
| Abstract: | Polymer white light-emitting diodes(PWLEDs) with p-type Si and nanometer-thick(~10 nm) polycrystalline p-Si anode are reported.The structures of the PWLEDs are Si anodes/ PEDOT:PSS/ MEH-PPV: PFO/Cs2CO3/ Sm/ Au.PWLEDs are optimized by adjusting the mixture of MEH-PPV and PFO as the active polymer layer.It is found that when MEH-PPV is 0.13%,the PWLEDs show white emission with CIE coordinates of(0.372,0.391).The optimized p-Si anode resistivity of the PWLEDs is investigated.When the resistivity of p-Si is 0.079.cm,a maximum currency efficiency of 0.191 cd/A and a power efficiency of 0.131 lm/W are obtained.Furthermore,polycrystalline p-Si anode is optimized by adopting various thickness of the Ni layer,the maximum currency efficiency and power efficiency are raised to 0.371 cd/A and 0.187 lm/W respectively when the thickness of Ni layer is 2 nm.In comparasion with PWLEDs with p-Si anode,the maximum efficiency has raised 94% and 43% respectively. |
| Keywords: | polymer white light-emitting diode p-Si ultrathin polycrystalline Si MEH-PPV PFO |
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