一种大容量IGBT的驱动和快速保护方法

提出的大容量绝缘栅双极型晶体管（ＩＧＢＴ）器件的驱动和快速保护方法能满足各种容量的ＩＧＢＴ器件和功率场效应晶体管（ＭＯＳＦＥＴ）器件对驱动和短路保护的要求。介绍了驱动电路和快速保护电路的原理，及保护电路响应时间的测量方法。给出了在不同基准电压下，模拟不同退饱和的集射电压下的保护响应时间。短路试验证明了保护电路的快速性。此驱动保护电路已用于由５０Ａ／６００Ｖ ＩＧＢＴ模块构成的逆变器和由４００Ａ／６００Ｖ ＩＧＢＴ模块构成的直流斩波器。工业运行结果表明保护方法响应时间快，抗干扰能力强。

Method of drive and rapid protection for high power IGBTs

This method can meet the requirements in both drive and short circuit protections for all insulated gate bipolar transistors (IGBTs) and power metal oxide semicoductor field effect transistors (MOSFETs) of different power degrees. The principle of the drive and protection circuits is introduced, the method of measuring the response time of the protection circuit is also introduced. A set of test data of protective response time in the different reference voltages and different simulating desaturation collector--emitter voltages is presented. Many short circuit experiments were done in an IGBT chopper. The results show that the protection circuit has a good performance of rapid protection. Now the drive and protection circuits have been applied to an inverter of 50A/600V IGBTs and a chopper of 400A/600V IGBTs. The practical results also show that the protection circuit not only has rapid response time,but also possesses strong noise immunity.