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纳米电路交叉冗余容错技术研究
引用本文:张洋,王友仁,张砦.纳米电路交叉冗余容错技术研究[J].佳木斯大学学报,2010,28(1):5-8.
作者姓名:张洋  王友仁  张砦
作者单位:南京航空航天大学自动化学院,江苏南京210016
摘    要:提出了一种针对纳米电路的数字电路容错设计新方法.该方法基于交叉冗余原理,利用两种二进制错误的不对称性,采用模块化方法对纳米电路进行容错设计.以阵列乘法器为例,采用新方法对电路进行设计和仿真,并结合实验结果与传统的可重构和三模冗余容错方法进行比较.交叉冗余方法无需检测模块及表决器,不会增加系统延时,并且在资源消耗方面远低于传统方法,对纳米电路尤其适用.

关 键 词:纳米电路  容错  交叉冗余  可靠性  故障屏蔽

Research on Fault-tolerant Techniques Based on Interwoven Redundancy for Nanoscale Circuits
ZHANG Yang,WANG You-ren,ZHANG Zhai.Research on Fault-tolerant Techniques Based on Interwoven Redundancy for Nanoscale Circuits[J].Journal of Jiamusi University(Natural Science Edition),2010,28(1):5-8.
Authors:ZHANG Yang  WANG You-ren  ZHANG Zhai
Institution:College of Automation and Engineering;Nanjing University of Aeronautics and Astronautics;Nanjing;210016;China
Abstract:A new method for designing fault-tolerant digital circuits to reduce the failure rate of nanoscale circuits based on interwoven redundancy and the asymmetric of two kinds of binary errors,using a modular approach to design circuits.With multiplier as an example,this paper conducted a simulation experiment using the new method.The results show that it is better than the traditional fault-tolerant design methods.The new method is especially suitable for nano-circuits because it won't increase the system delay...
Keywords:nano-circuits  fault-tolerant  interwoven redundant  reliability  fault masking  
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