基于田口法的在玻璃基板上溅射ITO薄膜制作工艺研究

利用射频磁控溅射方式将氧化铟锡(ITO)沉积在玻璃基板上,设定温度、压力、溅射功率为主要参数,每个参数均有3个水平,运用田口实验方法设计L9直交表,质量目标设定为方阻,以变异数分析得到的结果作为最优工艺参数条件,并测量膜厚、透光率.以X光衍射仪分析结晶状况、SEM观察结构及生长型态来了解其性质.结果显示功率对方阻的影响最大,贡献度占91%,而功率大,薄膜厚度越厚,晶粒粒径较大,结晶性较强,方阻减小及透过率降低.由于结晶性好也提高透光率,膜厚100~300 nm时,透光率80%以上.最优工艺参数为温度230 ℃、功率300 W及压力在1.5 mTorr下有方阻最小.

The Study on the Process of ITO Film Sputtered on Glass Based on Taguchi Method

This study is to sputter the indium tin oxide (ITO) film on glass by RF magnetron sputtering system with the design of temperature,working pressure and input energy as the main parameters,in which each parameter with three levels.The L9 orthogonal array is designed by using Taguchi experiment method.The quality target is set to sheet resistance.The results obtained from the analysis of the number of variants have been taken as the optimum conditions of the process parameters,and the film thickness and light transmittance are measured.Characterization feature of sheet resistance of coatings was explored through.Scanning electron microscope (SEM) and X-ray diffraction (XRD) are applied for observing grains and crystal structures to understand the property.The results indicate that the input energy appears the highest effect on sheet resistance,with the contribution accounted for 91%.While the thicker film is from the bigger power,with the result of the bigger the grain size,the stronger the crystallization,the smaller the sheet resistance and the lower the transparency.The transmittance is also improved due to good crystallization.The transparency is over 80% with the thickness of film from 100nm to 300 nm.The optimal process parameters to get the lowest sheet resistance are 230 ℃ temperature,300 W input energy,and working pressure below 1.5 mtorr.