P型和N型Cu_2O薄膜的电化学制备

以FTO玻片为基底,在不同pH值下采用恒电位电化学沉积法制备Cu2O样品.利用XRD、SEM、EDS对样品的相组成、晶体结构、微观形貌和化学成分进行了表征,并对Cu2O薄膜的光电性质和载流子类型进行了测量和分析.结果表明Cu2O薄膜的半导体性质与所用电解液的酸碱度有关,在酸性条件下,如pH=4,5时制备的Cu2O薄膜为N型半导体,在中性和碱性条件下,如pH=6,7,8,9,10,11时,制备的Cu2O薄膜为P型半导体.实验结果对制备N型Cu2O以及Cu2O的PN型同质结提供了一种有效方法.

Preparation of P-type and N-type Cu2O Film by Electrochemical Deposition

Cuprous oxide（ Cu2O） films were prepared by electrochemical deposition on FTO substrates with the same constant potential under the different pH values. Phase constitutions,crystal structure,microstructure and chemical compositions of Cu2O films were characterized and analyzed by XRD,SEM and EDS techniques. The measurement of photoelectric properties was carried out to determine the semiconducting type for Cu2O. The result shows that the conducting type of Cu2O is strongly dependent on the acid and alkaline of the electrolyte. In acidic condition,at pH = 4,5 for example,Cu2O is a N-type semiconductor. However,it can be a P-type if deposed in neutral or alkaline condition,such as at pH = 6,7,8,9,10,11. Our work provides a possible method to prepare N-type Cu2O and the homojunction of Cu2O.