Ga2O3/ITO/Ga2O3深紫外透明导电膜的研究

采用常压烧结方法制备了Ga2O3陶瓷靶,用X射线衍射仪、金相显微镜对Ga2O3陶瓷靶的结构和形貌进行了研究.用射频磁控溅射Ga2O3陶瓷靶材和直流磁控溅射ITO（锡铟氧化物）靶材分别制备了Ga2O3薄膜、Ga2O3/ITO/Ga2O3膜,用紫外-可见分光光度计、四探针测试仪对Ga2O3薄膜、Ga2O3/ITO/Ga2O3膜的光学透过率和电阻率进行了表征.Ga2O3薄膜不导电,光学带隙5.1 eV;Ga2O3（45 nm）/ITO（14 nm）/Ga2O3（45nm）膜在300 nm处的光学透过率71.5%,280 nm处60.6%,电阻率1.48×10-2Ω.cm.ITO层的厚度影响Ga2O3/ITO/Ga2O3膜的光电性质.

Studies on Deep Ultraviolet Transparent Conductive Ga_2O_2/ITO/Ga_2O_3 Films

A Ga2O3target was prepared by an atmospheric pressure sintering method,the structure and morphology of Ga2O3target were measured by X-ray diffractometer and metalloscopy.Ga2O3 films and Ga2O3/ITO/Ga2O3 films were prepared by alternate RF magnetron sputtering of Ga2O3target and DC magnetron sputtering of ITO（indium tin oxide）target.The transmittance and resistivity of Ga2O3 films and Ga2O3/ITO/ Ga2O3 films were measured by UV-visible spectrophotometers and four-point probes.Ga2O3 films are electrically insulating and have a band gap of 5.1eV,Ga2O3（45nm）/ITO（14nm）/ Ga2O3（45nm）films show high transmittance of 71.5% at the wavelength of 300nm and 60.6% at the wavelength of 280 nm,a resistivity of 1.48×10-2Ω·cm.ITO thickness influences the electrical and optical properties of Ga2O3/ITO/Ga2O3 films.