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微旋转结构法测量Al薄膜的残余应力
引用本文:于映,丁可柯,花婷婷,薄亚明,张明,张彤.微旋转结构法测量Al薄膜的残余应力[J].南京邮电大学学报(自然科学版),2014(1):32-34,40.
作者姓名:于映  丁可柯  花婷婷  薄亚明  张明  张彤
作者单位:[1]南京邮电大学电子科学与工程学院,江苏南京210023 [2]东南大学毫米波国家重点实验室,江苏南京210096 [3]东南大学电子科学与工程学院,江苏南京210096
基金项目:南京邮电大学人才引进项目(NY208032)、毫米波国家重点实验室开放课题(K201412)资助项目
摘    要:薄膜的残余应力是影响MEMS器件工作可靠性和稳定性的重要因素,微旋转结构法能够简单有效地测量薄膜的残余应力.文中采用MEMS工艺制作Al薄膜微旋转结构,根据微旋转结构法对m薄膜的残余应力进行了测量和计算.实验结果表明,溅射Al膜的残余应力为张应力,大小在80~110 GPa之间.对Al薄膜悬梁进行静电驱动,其驱动电压为31 ~34 V,与根据Al膜残余应力的测量值所计算出的驱动电压基本吻合.

关 键 词:微旋转结构  Al薄膜  残余应力

Measurement of Residual Stress in Aluminum Thin Film Using Micro-rotating-structure Method
YU Ying,DING Ke-ke,HUA Ting-ting,BO Ya-ming,ZHANG Ming,ZHANG Tong.Measurement of Residual Stress in Aluminum Thin Film Using Micro-rotating-structure Method[J].Journal of Nanjing University of Posts and Telecommunications,2014(1):32-34,40.
Authors:YU Ying  DING Ke-ke  HUA Ting-ting  BO Ya-ming  ZHANG Ming  ZHANG Tong
Institution:1.College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunicarions, Nanjing 210023, China ; State Key Laboratory of Millimeter Waves, Southeast University, Nanjing 210096, China; 2.College of Electronic Science and Engineering, Southeast University, Nanjing 210096, China;)
Abstract:The residual stress of thin films is the main factor affecting the stability and reliability of MEMS devices.The micro-rotating-structure method can effectively measure the residual stress of the thin film.Using MEMS processes,the micro-rotating-structure of aluminum thin film is fabricated and used to measure and calculate the residual stress of the film.Experimental results reveal that the residual stress in sputtered the aluminum thin film is tensile stress with the value of 80-110 GPa.The driving voltage for static actuated aluminum thin film is 31-34 V,thus it is in agreement with the value calculated by the measured residual stress of the aluminum thin film.
Keywords:micro-rotating-structure  Aluminum thin film  residual stress
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