| a-Si/Ti叠层膜的相互扩散和光电特性 |
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| 引用本文： | 吴萍.a-Si/Ti叠层膜的相互扩散和光电特性[J].汕头大学学报(自然科学版),1997,12(1):92-94. |
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| 作者姓名： | 吴萍 |
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| 作者单位： | 汕头大学物理学系 |
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| 摘 要： | 本文研究了ａ－Ｓｉ／Ｔｉ叠层膜在１８０℃温度下的互扩散，利用ＸＰＳ分析发现Ｔｉ、Ｓｉ原子具有相等的原子浓度，生成物为ＴｉＳｉ；利用ＵＳ／ＶＩＳ分光光度计测试了生成物的透过率，发现其透过率在紫外较ＩＴＯ膜提高，测量了ａ－Ｓｉ／Ｔｉ界面特性近似为欧姆接触。该生成物可作为一种光电薄膜。
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| 关 键 词： | 互扩散，XPS分析，光电特性 |
The mutual difussion and photoelectric characteristics of a-Si/Ti layers |
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| Wu Ping.The mutual difussion and photoelectric characteristics of a-Si/Ti layers[J].Journal of Shantou University(Natural Science Edition),1997,12(1):92-94. |
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| Authors: | Wu Ping |
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| Abstract: | Mutual diffusion of a-Si/Ti layers studied at 180C by using XPS analysis has indicated that the atomic concentration of Ti and that of Si is almost equal and the prod- uct obtained is TiSi. US/VIS spectrophotometer of the product film has showed that it has a higher transmissivity than an ITO film in ultra violet region. Upon characteristics test , a-Si/Ti interface has been found to approximate an ohmic contact. It is concluded that the product film can be used as a photoelectric film. |
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| Keywords: | mutual difussion : XPS analysis : photoelectric characteristic |
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