纯相SnO2纳米晶薄膜的一步电沉积制备及其结构与光电性能研究

采用一步电沉积在氧化铟锡（ITO）导电玻璃基底上制备纯相SnO₂纳米晶薄膜材料，通过改变沉积条件，研究沉积电位、镀液温度和HNO₃浓度对薄膜组成结构的影响。结果表明：当沉积电位为-0.9 V（vs.SCE），镀液温度为65℃，HNO₃浓度为50 mmol/L时，所制备的SnO₂纳米晶薄膜为纯相金红石型结构，且薄膜相对连续致密。光电性能测试表明，该薄膜具有优异的光电性能，在可见光区透光率大于90%，带隙为3.75 eV，且电阻率为2.2×10^-3 Ω·cm，载流子浓度为1.9×10²⁰ cm^-3，载流子迁移率为14.8 cm²/（V·s）。故所制备的SnO₂纳米晶薄膜是太阳能电池的理想窗口层材料。

Pure-phase SnO2 nanocrystal films prepared by one-step electrodeposition and their structural and optoelectronic properties

In this work, pure-phase tin oxide (SnO₂) nanocrystal films were deposited on indium tin oxide (ITO) substrates by a one-step electrodeposition approach followed by annealing treatment. The effects of varying the electrodeposition potential, electrolyte temperature and HNO₃ concentration on the crystal structures of SnO₂ films were investigated by varying the deposition parameters. The results showed that a pure tetragonal rutile SnO₂ film was obtained at the electrodeposition potential of -0.9 V (vs. SCE), an electrolyte temperature of 65℃, and an HNO₃ concentration of 50 mmol/L. The obtained SnO₂ film possessed relatively continuous and compact surface features, and exhibited good optical and electrical performance with a transmittance higher than 90% in the visible light region, a band gap of 3.75 eV, as well as an electrical resistivity of 2.2×10^-3 Ω·cm, a carrier concentration of 1.9×10²⁰ cm^-3 and a carrier mobility of 14.8 cm²/(V·s). Therefore, the SnO₂ nanocrystal film can be used as a promising window layer material for solar cells.