| 硅基钠米材料发光特性的研究进展 |
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| 引用本文： | 彭英才,何宇亮.硅基钠米材料发光特性的研究进展[J].洛阳大学学报,1999(1). |
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| 作者姓名： | 彭英才 何宇亮 |
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| 作者单位： | 河北大学电子信息工程学院(彭英才)，北京航空航天大学材料物理与化学研究中心(何宇亮) |
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| 摘 要： | 近年，硅基低维材料物理与工艺的研究预示，硅基光电子学将是今后半导体光电子学的一个主要发展方向，而硅基低维发光材料又将成为半导体光电子集成技术的主要基础材料。随着硅基超晶格、量子阱和多孔硅研究的不断深化以及纳米科学技术的日益发展，硅基发光材料正向纳米方向开拓。本文将主要介绍硅基纳米材料，如采用各种成膜技术在不同衬底表面上制备的高质量纳米硅（ｎｃ－Ｓｉ：Ｈ）膜，镶嵌在各种介质，如 －Ｓｉ：Ｈ、ＳｉＯ２或ＳｉＮｘ中的纳米晶硅，以及利用自组织生长的Ｇｅ、Ｓｉ以及ＧｅＳｉ纳米量子点的光致发光特性及其最近研究进展。
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| 关 键 词： | 硅基纳米材料，光致发光，电致发光，发光机制 |
The Research Development on Light Emitting Propertiesof Si-based Nanometer Materials |
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| Peng Yingcai.The Research Development on Light Emitting Propertiesof Si-based Nanometer Materials[J].Journal of Luoyang University,1999(1). |
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| Authors: | Peng Yingcai |
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| Abstract: | Recently, the study of Si-based low dimensional material physics andtechnology indicated that Si-based optoelectronics will be one of the main topicsin the semiconductor optoelectronics research area in the near future, and Si-basedlow dimensional light-emitting materials are fundamental in semiconductor opto-electronic integration technology. With deepened research of Si-based superlattice,quantum well, porous Si and advanced nanometer science technology, a path towardsnanometer light-emitting materials is being opend up. In this paper, we introducethe recent research development on light-emitting properties of Si-based nanometermaterials, such as high quality nc-Si:H films fabricated by various formed technol-ogy, nanocrystalline Si embedded in a-Si:H, SiO2 and SiNx medium films, Ge, Siand GeSi nanometer quantum dots fabricated by self-organizing growth. |
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| Keywords: | Si-based materials photoluminescence electroluminescence light-emitting mechanism |
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