| 大尺寸单晶金刚石同质连接技术 |
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| 引用本文： | 舒国阳,Ralchenko V.,Bolshakov A.,刘康,孙明琪,姚凯丽,赵继文,高鸽,刘本建,王伟华,李一村,刘雪冬,代兵,朱嘉琦.大尺寸单晶金刚石同质连接技术[J].自然杂志,2019,41(2):100-110. |
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| 作者姓名： | 舒国阳 Ralchenko V. Bolshakov A. 刘康 孙明琪 姚凯丽 赵继文 高鸽 刘本建 王伟华 李一村 刘雪冬 代兵 朱嘉琦 |
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| 作者单位： | 1.哈尔滨工业大学 特种环境复合材料技术国家级重点实验室，哈尔滨 150001；2俄罗斯科学院普通物理研究所，俄罗斯 莫斯科 119991 |
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| 摘 要： | 介绍了制备人造单晶金刚石的技术途径及发展现状,重点讨论并对比了几种化学气相沉积法(CVD)金刚石制备技术的优缺点,详细阐述了基于微波等离子体CVD (MPCVD)法的同质连接技术——一种突破晶体尺寸限制,实现大尺寸单晶金刚石的有效途径。通过该技术实现了英寸级单晶金刚石晶片的制备,并针对横向生长、界面质量及演化、三维结构连接控制等核心科学技术问题进行了分析和讨论,展望了其在尖端应用领域的发展前景。
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| 关 键 词： | 人造金刚石 单晶 微波等离子体化学气相沉积 同质连接 |
Coessential-joint growth technology of large size single crystal diamond |
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| Institution: | 1.National Key Laboratory of Science and Technology on Advanced Composites in Special Environments, Harbin Institute of Technology, Harbin 150001, China;2.General Physics Institute of Russian Academy of Science, Moscow 119991, Russia |
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| Abstract: | The technical approach and status of development of synthetic single-crystal diamond (SCD) were introduced with the comparison of several different chemical vapor deposition (CVD) diamond techniques on their advantages and disadvantages.Coessential-joint growth technology, an effective method for breaking through the dimensional limitation and realizing the large size SCD, was focused on Microwave Plasma CVD (MPCVD). Inch sized SCD wafer was achieved. The discussion and analysis were presented on the scientific issues such as lateral growth, interface quality and evolution, as well as the control of 3D structure
connecting process. In addition, the prospects in the field of advanced applications were forecasted. |
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