加磁场制备FeCuNbSiB软磁合金薄膜的畴结构和巨磁阻抗效应

本文研究了用射频溅射法制备的Fe73．5CulNb3Si13．5B9薄膜的巨磁阻抗效应，并对其磁畴结构进行了分析．探讨在制备过程中加一纵向或横向稳恒磁场对薄膜各向异性场的影响．在制备过程中加磁场使得材料的软磁性能得到明显改善，矫顽力从400Am^（-1）降为60Am^（-1），磁阻抗效应有较大提高．加横向磁场制备的Fe73．5CulNb3Si13．5B9薄膜的畴结构，不是严格的沿着样品的长方向，而是略向宽方向倾斜．经300℃退火后的FeCuNbSiB薄膜具有最大的磁阻抗效应，其纵向磁阻抗比为38％，横向磁阻抗比为27％，巨磁阻抗效应的磁场灵敏度分别为47．5％／kAm^（-1）和11．3％／kAm^（-1）．

Domain structure and giant magneto-impedance effect in FeCuNbSiB films prepared with a magnetic field

Domain structure and giant magneto-impedance （GMI） effects of FeCuNbSiB films, which were prepared by radio frequency sputtering without field and with a magnetic field about 72 kA/m, are investigated. The results show that after annealing at 300℃, the GMI ratios reach the maximum values of about 38% in longitudinal and 27% in transverse dc magnetic fields, at a frequency of 13 MHz. The longitudinal magnetic responses of GMI ratios show very sharp peaks around the transverse anisotropy field, and the sensitivity can reach 47.5%/kA m^（-1） in the field range 0.4-6 kA/m, at 13 MHz. The transverse anisotropy is 0.4 kA/m, larger than that of 0.08 kA/m in the film prepared without magnetic field, because an additional transverse anisotropy is induced by the field applied in the fabrication process.