铅基钙钛矿太阳能电池界面工程的研究

在wxAMPS太阳能电池数值模拟软件微平台上，对ITO/ZnO/界面层(IFL)/MAPbI₃/Sprio-OMeTAD/Au结构的钙钛矿太阳能电池(PSCs)的电子传输层(ETL)/吸收层的界面工程进行研究。结果表明:在界面层缺陷密度低于1014 cm-3时，PSCs的电池性能几乎不变，当缺陷密度高于1014 cm-3时，PSCs的电池性能急剧下滑。当界面层与吸收层亲和势差(Δχ)在-0.7~-0.1 eV范围时，各项电池性能参数均随Δχ的增大而增大；当Δχ在-0.1~0.5 eV范围时，各项电池性能呈平缓增长；当Δχ大于0.5 eV时，电池的短路电流(J_SC)呈平缓增长趋势，而开路电压(V_OC)、填充因子(FF)及光电装换效率(PCE)快速降低。当带隙E_g在0.9~1.4 eV范围内增大时，PSCs的V_OC、FF和PCE均上升；当带隙E_g大于1.4 eV，PSCs的各项性能参数基本不变。

The Interface Engineering of Lead-based Perovskite Solar Cells

The ITO/ZnO/interface layer (IFL)/MAPbI₃/Sprio-OMeTAD/Au structure of Perovskite Solar Cells (PSCs) and the electron transport layer (ETL)/absorber interface engineering are studied based on the wxAMPS solar cell numerical simulation software micro-platform. The results show that the performance of PSCs is almost unchanged when the defect density of the interface layer is lower than 1014 cm-3, and when the defect density is higher than 1014 cm-3, the performance of PSCs declines sharply. When the affinity difference(Δχ) between the interface layer and the absorber layer is within the range of -0.7~-0.1 eV, the parameters of PSCs increase with the increase of Δχ; when Δχ is within the range of -0.1~0.5 eV, the solar cell performance shows a gentle increase. When Δχ is greater than 0.5 eV, the short-circuit current (J_SC) of the solar cell shows a gentle increase while the open circuit voltage (V_OC), fill factor (FF) and photovoltaic conversion efficiency (PCE) decrease rapidly. When the band gap E_g increases within 0.9~1.4 eV, the V_OC, FF and PCE of PSCs increase. When the band gap E_g is greater than 1.4 eV, the performance parameters of PSCs remain unchanged basically.