| 基于表面势的有机薄膜晶体管漏电流的解析模型 |
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| 引用本文： | 吴穹,姚若河,刘玉荣.基于表面势的有机薄膜晶体管漏电流的解析模型[J].华南理工大学学报(自然科学版),2011(10):1-6. |
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| 作者姓名： | 吴穹 姚若河 刘玉荣 |
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| 作者单位： | 华南理工大学电子与信息学院; |
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| 基金项目： | 国家自然科学基金资助项目(60776020,61076113) |
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| 摘 要： | 考虑到有机薄膜晶体管(OTFT)带隙中存在指数分布的陷阱态密度,提出了基于表面势的电流解析模型.在模型建立过程中,使用薄层电荷近似区分扩散电流和漂移电流;采用泰勒展开来实现表面势的解析求解,得到较高的求解精度.基于变程跳跃理论,即载流子在局域态之间的热激活特征的隧穿输运机理,解释了OTFT的转移特性和温度特性.模型计算...
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| 关 键 词： | 有机薄膜晶体管 漏电流模型 表面势 转移特性 陷阱态 |
Surface-Potential-Based Analytical Model of Drain Current of Organic Thin-Film Transistor |
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| Wu Qiong Yao Ruo-he Liu Yu-rong.Surface-Potential-Based Analytical Model of Drain Current of Organic Thin-Film Transistor[J].Journal of South China University of Technology(Natural Science Edition),2011(10):1-6. |
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| Authors: | Wu Qiong Yao Ruo-he Liu Yu-rong |
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| Institution: | Wu Qiong Yao Ruo-he Liu Yu-rong(School of Electronic and Information Engineering,South China University of Technology,Guangzhou 510640,Guangdong,China) |
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| Abstract: | Proposed in this paper is a surface-potential-based drain current model for organic thin-film transistor(OTFT) that takes into consideration the exponential distribution of the trap state density within the bandgaps.In the process of modeling,the diffusion and drift currents are approximately identified by means of the charge sheet approach.Then,a high-precision analytical solution for surface potential is presented via Taylor expansion.More-over,the transfer and temperature characteristics of OTFT are desc... |
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| Keywords: | organic thin-film transistor drain current model surface potential transfer characteristics trap state |
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