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改善AMR薄膜磁电阻传感器线性度的几种方法
引用本文:王立锦.改善AMR薄膜磁电阻传感器线性度的几种方法[J].北京科技大学学报,2006,28(8):744-749.
作者姓名:王立锦
作者单位:北京科技大学材料科学与工程学院,北京,100083
基金项目:国家高技术研究发展计划(863计划)
摘    要:在分析金属薄膜磁电阻传感器非线性产生原因的基础上,提出了几种设计AMR(各向异性磁电阻)薄膜磁电阻传感器时改善其线性度的方法.用直流磁控溅射方法制备了Ni80Fe20和Ni65Co35 AMR薄膜材料;用微加工工艺制做出了几种AMR传感器元件,并给出了测试结果.

关 键 词:金属薄膜  各向异性磁电阻效应  传感器  线性度  微加工  改善  薄膜材料  电阻传感器  线性度  方法  sensors  linearity  improve  测试结果  元件  工艺制做  微加工  法制  直流磁控溅射  各向异性磁电阻  设计  非线性  金属薄膜  分析
收稿时间:2005-05-30
修稿时间:2005-09-15

Several methods to improve the linearity of AMR sensors
WANG Lijin.Several methods to improve the linearity of AMR sensors[J].Journal of University of Science and Technology Beijing,2006,28(8):744-749.
Authors:WANG Lijin
Institution:Materials Science and Engineering School, University of Science and Technology Beijing, Beijing 100083, China
Abstract:Several methods to improve the linearity of anisotropic magnetoresistance (AMR) sensors were suggested based on the analysis of the generation of nonlinearity in magnetoresistive sensors of metallic films. Ni_ 80 Fe_ 20 and Ni_ 65 Co_ 35 AMR thin films were prepared by DC magnetic sputtering. Some AMR sensors were made by the micro-fabrication technique,and the testing results were also presented.
Keywords:metallic films  anisotropic magnetoresistance effects  sensor  linearity  microfabrication
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