拉曼光谱法研究微晶硅薄膜应力梯度

采用拉曼光谱法研究了不同退火时间下的微晶硅薄膜应力。结果发现样品的应力梯度并不随着退火时间的增加而增大。而是存在最大值,这可能与晶粒尺寸有关,且靠近玻璃衬底的薄膜有较高压应力,由衬底到薄膜表面压应力逐渐减小,直到表面变为拉应力。

Research of stress gradients in microcrystalline silicon thin films by Raman spectroscopy

Stress gradients of microcrystalline silicon thin films were researched by Raman spectroscopy. The result show that stress gradients of thin films that is not increased with annealing temperature has great values, which can be in relation to crystallite size. The result also indicates that the film near the glass substrate has greater stress and the stress was decreased from substrate to the film free surface until the stress of the surface gradually reduces a tensile stress.