| 砷化镓光导开关中流注自发辐射实验的理论分析 |
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| 引用本文： | 刘鸿,郑理,杨洪军,杨维,郑勇林. 砷化镓光导开关中流注自发辐射实验的理论分析[J]. 成都大学学报(自然科学版), 2012, 31(4): 324-326. DOI: 10.3969/j.issn.1004-5422.2012.04.007 |
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| 作者姓名： | 刘鸿 郑理 杨洪军 杨维 郑勇林 |
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| 作者单位： | 1.成都大学电子信息工程学院,四川成都,610106;2.成都工业学院机电工程系,四川成都,611730 |
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| 基金项目： | 四川省科技厅基础应用研究计划 |
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| 摘 要： | 分析了高增益砷化镓光导开关中流注（即电流丝）一端不同辐射波长的自发辐射实验现象,导出了不同辐射波长的辐射复合系数之间的关系,拓展了电流丝的自发辐射随电流丝电流变化的数学模型．计算结果表明,丝电流相同时流注自发辐射的其他峰值强度略小于890nm自发辐射强度．
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| 关 键 词： | 砷化镓光导开关 电流丝 辐射复合系数 辐射强度 |
Theoretical Analysis of Streamer Radiation in GaAs Photoconductive Semiconductor Switches (PCSS) |
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| LIU Hong,ZHENG Li,YANG Hongjun,YANG Wei,ZHENG Yonglin. Theoretical Analysis of Streamer Radiation in GaAs Photoconductive Semiconductor Switches (PCSS)[J]. Journal of Chengdu University (Natural Science), 2012, 31(4): 324-326. DOI: 10.3969/j.issn.1004-5422.2012.04.007 |
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| Authors: | LIU Hong ZHENG Li YANG Hongjun YANG Wei ZHENG Yonglin |
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| Affiliation: | 1(1.School of Electronic Information Engineering,Chengdu University,Chengdu 610106,China;2.Department of Electrical and Mechanical Engineering,Chengdu Technological University,Chengdu 611730,China) |
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| Abstract: | The spontaneous radiative phenomenon of different wavelength of radiation at one end of a streamer(i.e.current filament) in high gain GaAs photoconductive semiconductor switches(PCSS) was analyzed.The relationship among radiative recombination coefficients of different radiative wavelengths was induced.And the mathematical model of spontaneous radiation of current filament with the change of current filament was expanded.The results show that the other intensity peaks of spontaneous radiation of the streamer are slightly less than the spontaneous radiation intensity of 890nm when the filament currents are the same. |
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| Keywords: | GaAs photoconductive semiconductor switch (PCSS) current filament radiative recombination coefficient radiative intensity |
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