| 半导体量子阱共振隧穿特性分析 |
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| 引用本文： | 刘宇,李志坚,周光辉.半导体量子阱共振隧穿特性分析[J].湖南师范大学自然科学学报,2006,29(4):31-34. |
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| 作者姓名： | 刘宇 李志坚 周光辉 |
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| 作者单位： | 1. 湖南省第一师范学校物理与电子学系,中国,长沙,410002
2. 湖南师范大学物理与信息科学学院,中国,长沙,410081 |
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| 基金项目： | 湖南省教育厅科研基金资助项目(04A031) |
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| 摘 要： | 用双势垒模型研究了半导体异质结量子阱的隧穿特性.利用电子波函数的连接条件,先计算出电子通过一简单方势垒的隧穿几率,再利用转移矩阵方法得到电子通过双势垒的隧穿几率.所得结果能较好地解释半导体量子阱结构中的共振隧穿现象.
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| 关 键 词： | 量子阱 双势垒 隧穿几率 转移矩阵 |
| 文章编号： | 1000-2537（2006）04-0031-04 |
| 收稿时间： | 2006-08-17 |
| 修稿时间： | 2006年8月17日 |
Resonant Tunneling Characteristics for a Semiconductor Quantum Well |
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| LIU Yu,LI Zhi-jian,ZHOU Guang-hui.Resonant Tunneling Characteristics for a Semiconductor Quantum Well[J].Journal of Natural Science of Hunan Normal University,2006,29(4):31-34. |
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| Authors: | LIU Yu LI Zhi-jian ZHOU Guang-hui |
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| Institution: | 1. Department of Physics and Electronics, Hunan First Normal School, Changsha 410002, China; 2. College of Physics and Infonnafions Science, Hunan Normal University, Changsha 410081, China |
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| Abstract: | The tunneling characteristics of the semicondoctor quantum well through a double-barrier potential model is studied.First,the transmission probability for an electron tunneling through a single rectangular barrier is calculated by the continuous condition of the wave function,then the transmission probability for an electron transverses through a double-barrier structure is also obtained by means of transfer matrix.The results obtained can explain the phenomenon of resonant tunneling for the semiconductor quantum well structures. |
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| Keywords: | quantum well double-barrier potential tunneling probability transfer matrix |
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