| MOCVD Al_xGa_(1-x)N/GaN超晶格结构的界面与表面表征 |
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| 引用本文： | 王元樟,李金钗,李书平,陈航洋,刘达艺,康俊勇.MOCVD Al_xGa_(1-x)N/GaN超晶格结构的界面与表面表征[J].厦门理工学院学报,2010,18(1):27-31. |
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| 作者姓名： | 王元樟 李金钗 李书平 陈航洋 刘达艺 康俊勇 |
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| 作者单位： | 1. 厦门理工学院数理系,福建,厦门,361024;福建省半导体材料及应用重点实验室,福建,厦门,361005
2. 福建省半导体材料及应用重点实验室,福建,厦门,361005 |
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| 基金项目： | 厦门理工学院高层次人才科技项目(YKJ09007R) |
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| 摘 要： | 采用掠入射X射线反射谱技术和原子力显微镜表面形貌技术对AlxGa1-xN/GaN超晶格结构的界面与表面进行了表征,将反射谱数据与X射线衍射结果结合获得了垒层组分及阱层宽度与界面粗糙度的关系.掠入射X射线反射谱的显著强度振荡与原子力显微镜所观察到的台阶流动形貌表明了平整的界面和表面的存在.研究发现,低Al组分(x=0.15)阱宽小的样品界面与表面粗糙度最小.
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| 关 键 词： | GaN基半导体 异质结构 高分辨率X射线衍射 掠入射X射线反射谱 原子力显微镜 |
Interface and Surface Characterization of MOCVD AlxGa1-xN/GaN Superlattice |
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| WANG Yuan-zhang,LIN Jin-cha,LI Shu-ping,CHEN Hang-yang,LIU Da-yi,KANG Jun-yong.Interface and Surface Characterization of MOCVD AlxGa1-xN/GaN Superlattice[J].Journal of Xiamen University of Technology,2010,18(1):27-31. |
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| Authors: | WANG Yuan-zhang LIN Jin-cha LI Shu-ping CHEN Hang-yang LIU Da-yi KANG Jun-yong |
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| Institution: | 1.Department of Mathematics and Physics/a>;Xiamen University of Technology/a>;Xiamen 361024/a>;China/a>;2.Fujian Key Laboratory of Semiconductor Materials and Applications/a>;Xiamen 361005/a>;China |
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| Abstract: | The grazing incidence X-ray reflectivity (GIXR) technique and atomic force microscopy (AFM) were exploited to obtain an accurate evaluation of the interfaces and surfaces for AlxGa1-xN/GaN superlattice structures.The X-ray diffraction results have been combined with reflectivity data to evaluate the layer thickness and Al mole fraction in the AlGaN layer.The presence of smooth interfaces is responsible for the observation of intensity oscillation in GIXR,which is well correlated to step flow observation in ... |
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| Keywords: | GaN-based semiconductor heterostructure high-resolution x-ray diffraction grazing incidence x-ray reflectivity atomic force microscopy |
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